Datasheet IPB230N06L3 G, IPP230N06L3 G (Infineon) - 2
| Manufacturer | Infineon |
| Description | OptiMOS Power Transistors |
| Pages / Page | 10 / 2 — IPB230N06L3 G IPP230N06L3 G. Parameter. Symbol Conditions. Values. Unit. … |
| File Format / Size | PDF / 305 Kb |
| Document Language | English |
IPB230N06L3 G IPP230N06L3 G. Parameter. Symbol Conditions. Values. Unit. min. typ. max. Thermal characteristics
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IPB230N06L3 G IPP230N06L3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics
Thermal resistance, junction - case R thJC - - 4.2 K/W Thermal resistance, R thJA minimal footprint - - 62 junction - ambient 6 cm² cooling area4) - - 40
Electrical characteristics,
at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=11 µA 1.2 1.7 2.2 V Zero gate voltage drain current DS=60 V, V GS=0 V, I DSS - 0.1 1 µA T j=25 °C V DS=60 V, V GS=0 V, - 10 100 T j=125 °C Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=30 A - 19.0 23 mΩ V GS=4.5 V, I D=15 A - 28.6 40.8 V Drain-source on-state resistance R GS=10 V, I D=30 A, DS(on) - 18.7 23.0 (SMD) V GS=4.5 V, I D=15 A, - 28.3 40.8 (SMD) Gate resistance R G - 0.9 - Ω |V Transconductance DS|>2|I D|R DS(on)max, g fs 16 31 - S I D=30 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2010-01-22
Thermal resistance, junction - case R thJC - - 4.2 K/W Thermal resistance, R thJA minimal footprint - - 62 junction - ambient 6 cm² cooling area4) - - 40
Electrical characteristics,
at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 60 - - V Gate threshold voltage V GS(th) V DS=V GS, I D=11 µA 1.2 1.7 2.2 V Zero gate voltage drain current DS=60 V, V GS=0 V, I DSS - 0.1 1 µA T j=25 °C V DS=60 V, V GS=0 V, - 10 100 T j=125 °C Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=30 A - 19.0 23 mΩ V GS=4.5 V, I D=15 A - 28.6 40.8 V Drain-source on-state resistance R GS=10 V, I D=30 A, DS(on) - 18.7 23.0 (SMD) V GS=4.5 V, I D=15 A, - 28.3 40.8 (SMD) Gate resistance R G - 0.9 - Ω |V Transconductance DS|>2|I D|R DS(on)max, g fs 16 31 - S I D=30 A 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 2010-01-22
