Datasheet SID11x2KQ SCALE-iDriver Family (Power Integrations) - 10

ManufacturerPower Integrations
DescriptionUp to 8 A Single Channel IGBT/MOSFET Gate Driver for Automotive Applications Providing Reinforced Galvanic Isolation up to 1200 V Blocking Voltage
Pages / Page22 / 10 — SID11x2KQ. VCE Diode Chain. Pin. Return Pin. Recommended. Value. Symbol. …
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SID11x2KQ. VCE Diode Chain. Pin. Return Pin. Recommended. Value. Symbol. Remark

SID11x2KQ VCE Diode Chain Pin Return Pin Recommended Value Symbol Remark

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SID11x2KQ VCE Diode Chain Pin Return Pin Recommended Value Symbol Remark
Needed if command signals >5 V are used. For 15 V Command Signal IC Application specific R input logic a value of 3.3 kW is recommended. The use 1 1 of 1% / 0.1 W / 50 V in 0603 package is recommended. Needed if command signals >5 V are used. For 15 V R GND Application specific R input logic a value of 1.2 kW is recommended. The use 1 2 of 1% / 0.1 W / 50 V in 0603 package is recommended. Pull up resistor, the use of 1% / 0.1 W / 50 V in 0603 SO VCC 4.7 kW RSO package is recommended. VCC blocking capacitors C must be placed close to the 1 VCC GND 4.7 IC. Enlarged loop could result in inadequate VCC supply µF C1 voltage during operation. For C X7R / 25 V / 10% in a 1 1206 package is recommended. VCC blocking capacitors C must be placed close to the 2 VCC GND 470 nF C IC. Enlarged loop could result in inadequate VCC supply 2 voltage during operation. For C X7R / 25 V / 10% in a 2 0608 package is recommended. If used, the tau determines to τ = ( R × R × C ) / 1 2 F R GND Application specific C (R + R ) The use of NP0, C0G / 50 V / 5% in 0603 1 F 1 2 package is recommended. In case bad signal quality at the command signal input is expected, a schmitt trigger could be used to improve R IN Application specific IC 1 1 the signal quality at the IN pin. As a reference Nexperia 74LVC1G17-Q100 could be used. C should be at least 3 μF multiplied by the total gate S1x charge of the power semiconductor switch (Q ) GATE VEE COM Application specific C divided by 1 µC. The use of X7R / 25 V / 10% in 1206 S1x package is recommended. This capacitor needs to be placed close to the IC pins. C should be at least 3 μF multiplied by the total gate S2x charge of the power semiconductor switch (Q ) GATE VISO VEE Application specific C divided by 1 µC. The use of X7R / 25 V / 10% in 1206 S2x package is recommended. This capacitor needs to be placed close to the IC pins. Short-circuit response time capacitor. 33 pF is a typical application value, higher values will increase the response time while smal er values will decrease it. It can be adjusted in the range 33 pF to 330 pF. To VCE COM Application specific C determine the correct value short-circuit testing in RES double pulse configuration is recommended. Further- more the use of NP0, C0G / 50 V / 5% in 0603 package is recommended. Any net and any other layer should provide sufficient distance to in order to C avoid RES parasitic effects. To avoid misoperation, this pin should not be connected to anything else. This capacitor needs to be as close to VGXX GH 10 nF CGXX IC pins as possible. The use of X7R / 25 V / 10% in 0603 package is recommended. The use of 1% / 0.1 W / 50 V in 0603 package is D VCE 330 recommended. Any net and any other layer should W R VCE2 VCE provide sufficient distance to R in order to avoid VCE parasitic effects.
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Rev. C 09/19 www.power.com Document Outline Product Highlights Description Scale-iDriver − Product Portfolio Pin Functional Description SCALE-iDriver Functional Description Application Examples and Components Selection Power Dissipation and IC Junction Temperature Estimation Absolute Maximum Ratings Thermal Resistance Key Electrical Characteristics Typical Performance Characteristics eSOP-R16B (K Package) MSL Table ESD and Latch-Up Table IEC 60664-1 Rating Table Electrical Characteristics (EMI) Table Regulatory Information Table Part Ordering Information
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