Datasheet NTZD3155C (ON Semiconductor) - 3
| Manufacturer | ON Semiconductor |
| Description | MOSFET – Small Signal, Complementary with ESD Protection, SOT-563 20 V, 540 mA / -430 |
| Pages / Page | 8 / 3 — NTZD3155C. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. N/P. Test … |
| Revision | 4 |
| File Format / Size | PDF / 144 Kb |
| Document Language | English |
NTZD3155C. ELECTRICAL CHARACTERISTICS. Parameter. Symbol. N/P. Test Condition. Min. Typ. Max. Unit
Model Line for this Datasheet
Text Version of Document
link to page 3
NTZD3155C ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol N/P Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE
Total Gate Charge QG(TOT) 1.5 2.5 Threshold Gate Charge QG(TH) N 0.1 VGS = 4.5 V, VDS = −10 V; ID = 540 mA Gate−to−Source Charge QGS 0.2 Gate−to−Drain Charge QGD 0.35 nC Total Gate Charge QG(TOT) 1.7 2.5 Threshold Gate Charge QG(TH) V 0.1 P GS = −4.5 V, VDS = 10 V; ID = −380 mA Gate−to−Source Charge QGS 0.3 Gate−to−Drain Charge QGD 0.4
SWITCHING CHARACTERISTICS (VGS = V)
(Note 4) Turn−On Delay Time td(ON) N 6.0 Rise Time tr V 4.0 GS = 4.5 V, VDD = −10 V, ID = 540 mA, R Turn−Off Delay Time t G = 10 W d(OFF) 16 Fall Time tf 8.0 ns Turn−On Delay Time td(ON) P 10 Rise Time tr V 12 GS = −4.5 V, VDD = 10 V, ID = −215 mA, R Turn−Off Delay Time t G = 10 W d(OFF) 35 Fall Time tf 19
Drain−Source Diode Characteristics
Forward Diode Voltage VSD N IS = 350 mA 0.7 1.2 VGS = 0 V, TJ = 25°C V P IS = −350 mA −0.8 −1.2 Reverse Recovery Time tRR N VGS = 0 V, IS = 350 mA 6.5 dIS/dt = 100 A/ms ns P IS = −350 mA 13 4. Switching characteristics are independent of operating junction temperatures
www.onsemi.com 3
NTZD3155C ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol N/P Test Condition Min Typ Max Unit CHARGES, CAPACITANCES AND GATE RESISTANCE
Total Gate Charge QG(TOT) 1.5 2.5 Threshold Gate Charge QG(TH) N 0.1 VGS = 4.5 V, VDS = −10 V; ID = 540 mA Gate−to−Source Charge QGS 0.2 Gate−to−Drain Charge QGD 0.35 nC Total Gate Charge QG(TOT) 1.7 2.5 Threshold Gate Charge QG(TH) V 0.1 P GS = −4.5 V, VDS = 10 V; ID = −380 mA Gate−to−Source Charge QGS 0.3 Gate−to−Drain Charge QGD 0.4
SWITCHING CHARACTERISTICS (VGS = V)
(Note 4) Turn−On Delay Time td(ON) N 6.0 Rise Time tr V 4.0 GS = 4.5 V, VDD = −10 V, ID = 540 mA, R Turn−Off Delay Time t G = 10 W d(OFF) 16 Fall Time tf 8.0 ns Turn−On Delay Time td(ON) P 10 Rise Time tr V 12 GS = −4.5 V, VDD = 10 V, ID = −215 mA, R Turn−Off Delay Time t G = 10 W d(OFF) 35 Fall Time tf 19
Drain−Source Diode Characteristics
Forward Diode Voltage VSD N IS = 350 mA 0.7 1.2 VGS = 0 V, TJ = 25°C V P IS = −350 mA −0.8 −1.2 Reverse Recovery Time tRR N VGS = 0 V, IS = 350 mA 6.5 dIS/dt = 100 A/ms ns P IS = −350 mA 13 4. Switching characteristics are independent of operating junction temperatures
www.onsemi.com 3
