Datasheet PSMN0R9-25YLC (Nexperia) - 2
| Manufacturer | Nexperia |
| Description | N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology |
| Pages / Page | 15 / 2 — Nexperia. PSMN0R9-25YLC. N-channel 25 V 0.99 mΩ logic level MOSFET in … |
| Revision | 02042018 |
| File Format / Size | PDF / 933 Kb |
| Document Language | English |
Nexperia. PSMN0R9-25YLC. N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology. Table 1
Model Line for this Datasheet
Text Version of Document
link to page 9 link to page 9 link to page 9 link to page 9
Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics
QGD gate-drain charge VGS = 4.5 V; ID = 25 A; - 14 - nC VDS = 12 V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; - 51 - nC VDS = 12 V; see Figure 15; see Figure 14 [1] Continuous current is limited by package
2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 S source mb D 2 S source 3 S source G 4 G gate mb D mounting base; connected to drain mbb076 S 1 2 3 4
SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version
PSMN0R9-25YLC LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 2 — 4 July 2011 2 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents
Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Table 1. Quick reference data
…continued
Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics
QGD gate-drain charge VGS = 4.5 V; ID = 25 A; - 14 - nC VDS = 12 V; see Figure 14; see Figure 15 QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; - 51 - nC VDS = 12 V; see Figure 15; see Figure 14 [1] Continuous current is limited by package
2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol
1 S source mb D 2 S source 3 S source G 4 G gate mb D mounting base; connected to drain mbb076 S 1 2 3 4
SOT669 (LFPAK; Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version
PSMN0R9-25YLC LFPAK; Power-SO8 plastic single-ended surface-mounted package; 4 leads SOT669 PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 2 — 4 July 2011 2 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents
