Datasheet AD8574-EP (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Zero-Drift, Single-Supply, Rail-to-Rail I/O Quad, Operational Amplifier |
| Pages / Page | 14 / 3 — Enhanced Product. AD8574-EP. SPECIFICATIONS 5 V ELECTRICAL … |
| Revision | A |
| File Format / Size | PDF / 310 Kb |
| Document Language | English |
Enhanced Product. AD8574-EP. SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS. Table 1. Parameter. Symbol. Conditions. Min. Typ. Max. Unit
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Enhanced Product AD8574-EP SPECIFICATIONS 5 V ELECTRICAL CHARACTERISTICS
VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1 5 μV −55°C ≤ TA ≤ +125°C 15 μV Input Bias Current IB 10 50 pA −55°C ≤ TA ≤ +125°C 1.0 1.5 nA Input Offset Current IOS 20 70 pA −55°C ≤ TA ≤ +125°C 150 200 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 120 140 dB −55°C ≤ TA ≤ +125°C 115 130 dB Large Signal Voltage Gain1 AVO RL = 10 kΩ, VO = 0.3 V to 4.7 V 125 145 dB −55°C ≤ TA ≤ +125°C 120 135 dB Offset Voltage Drift ∆VOS/∆T −55°C ≤ TA ≤ +125°C 0.005 0.04 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 4.99 4.998 V RL = 100 kΩ to GND at −55°C to +125°C 4.99 4.997 V RL = 10 kΩ to GND 4.95 4.98 V RL = 10 kΩ to GND at −55°C to +125°C 4.95 4.975 V Output Voltage Low VOL RL = 100 kΩ to V+ 1 10 mV RL = 100 kΩ to V+ at −55°C to +125°C 2 10 mV RL = 10 kΩ to V+ 10 30 mV RL = 10 kΩ to V+ at −55°C to +125°C 15 30 mV Short-Circuit Limit ISC ±25 ±50 mA −55°C to +125°C ±40 mA Output Current IO ±30 mA −55°C to +125°C ±15 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 120 130 dB −55°C ≤ TA ≤ +125°C 115 130 dB Supply Current per Amplifier ISY VO = 0 V 850 975 μA −55°C ≤ TA ≤ +125°C 1000 1075 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.4 V/μs Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz NOISE PERFORMANCE Voltage Noise en p-p 0 Hz to 10 Hz 1.3 μV p-p 0 Hz to 1 Hz 0.41 μV p-p Voltage Noise Density en f = 1 kHz 51 nV/√Hz Current Noise Density in f = 10 Hz 2 fA/√Hz 1 Gain testing is dependent upon test bandwidth. Rev. A | Page 3 of 14 Document Outline Features Enhanced Product Features Applications Pin Configuration General Description Table of Contents Revision History Specifications 5 V Electrical Characteristics 2.7 V Electrical Characteristics Absolute Maximum Ratings Thermal Characteristics ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide
VS = 5 V, VCM = 2.5 V, VO = 2.5 V, TA = 25°C, unless otherwise noted.
Table 1. Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS Offset Voltage VOS 1 5 μV −55°C ≤ TA ≤ +125°C 15 μV Input Bias Current IB 10 50 pA −55°C ≤ TA ≤ +125°C 1.0 1.5 nA Input Offset Current IOS 20 70 pA −55°C ≤ TA ≤ +125°C 150 200 pA Input Voltage Range 0 5 V Common-Mode Rejection Ratio CMRR VCM = 0 V to 5 V 120 140 dB −55°C ≤ TA ≤ +125°C 115 130 dB Large Signal Voltage Gain1 AVO RL = 10 kΩ, VO = 0.3 V to 4.7 V 125 145 dB −55°C ≤ TA ≤ +125°C 120 135 dB Offset Voltage Drift ∆VOS/∆T −55°C ≤ TA ≤ +125°C 0.005 0.04 μV/°C OUTPUT CHARACTERISTICS Output Voltage High VOH RL = 100 kΩ to GND 4.99 4.998 V RL = 100 kΩ to GND at −55°C to +125°C 4.99 4.997 V RL = 10 kΩ to GND 4.95 4.98 V RL = 10 kΩ to GND at −55°C to +125°C 4.95 4.975 V Output Voltage Low VOL RL = 100 kΩ to V+ 1 10 mV RL = 100 kΩ to V+ at −55°C to +125°C 2 10 mV RL = 10 kΩ to V+ 10 30 mV RL = 10 kΩ to V+ at −55°C to +125°C 15 30 mV Short-Circuit Limit ISC ±25 ±50 mA −55°C to +125°C ±40 mA Output Current IO ±30 mA −55°C to +125°C ±15 mA POWER SUPPLY Power Supply Rejection Ratio PSRR VS = 2.7 V to 5.5 V 120 130 dB −55°C ≤ TA ≤ +125°C 115 130 dB Supply Current per Amplifier ISY VO = 0 V 850 975 μA −55°C ≤ TA ≤ +125°C 1000 1075 μA DYNAMIC PERFORMANCE Slew Rate SR RL = 10 kΩ 0.4 V/μs Overload Recovery Time 0.05 0.3 ms Gain Bandwidth Product GBP 1.5 MHz NOISE PERFORMANCE Voltage Noise en p-p 0 Hz to 10 Hz 1.3 μV p-p 0 Hz to 1 Hz 0.41 μV p-p Voltage Noise Density en f = 1 kHz 51 nV/√Hz Current Noise Density in f = 10 Hz 2 fA/√Hz 1 Gain testing is dependent upon test bandwidth. Rev. A | Page 3 of 14 Document Outline Features Enhanced Product Features Applications Pin Configuration General Description Table of Contents Revision History Specifications 5 V Electrical Characteristics 2.7 V Electrical Characteristics Absolute Maximum Ratings Thermal Characteristics ESD Caution Typical Performance Characteristics Outline Dimensions Ordering Guide
