Datasheet DMN3012LEG (Diodes) - 6

ManufacturerDiodes
Description30V Synchronous N-Channel Enhancement Mode MOSFET
Pages / Page10 / 6 — DMN3012LEG. www.diodes.com
File Format / SizePDF / 611 Kb
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DMN3012LEG. www.diodes.com

DMN3012LEG www.diodes.com

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DMN3012LEG
2 2 ) V( 1.8 V ( 1.8 GE GE 1.6 1.6 TA TA I = 1mA D OL 1.4 OL 1.4 V V D D 1.2 1.2 OL OL H H S 1 S 1 I = 1mA D E E R I = 250µA D R 0.8 0.8 TH TH E E 0.6 0.6 I = 250µA D GAT GAT , 0.4 , ) 0.4 ) H H T( T( S S G 0.2 G 0.2 V V 0 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (℃) T , JUNCTION TEMPERATURE (℃) J J Figure 13. Q1 Gate Threshold Variation vs. Junciton Figure 14. Q2 Gate Threshold Variation vs. Junciton Temperature Temperature 30 30 V = 0V V = 0V GS GS 25 25 ) A( A( T 20 T N 20 N E E R R R R U 15 U C 15 C E T = 150oC E C J C T = 150oC R J T = 125oC R 10 J 10 OU T = 125oC OU J S , T = 85oC S J , T = 85oC I S I S J 5 T = 25oC J 5 T = 25oC J T = -55oC J T = -55oC J 0 0 0 0.3 0.6 0.9 1.2 0 0.3 0.6 0.9 1.2 V , SOURCE-DRAIN VOLTAGE (V) SD V , SOURCE-DRAIN VOLTAGE (V) SD Figure 15. Q1 Diode Forward Voltage vs. Current Figure 16. Q2 Diode Forward Voltage vs. Current 10000 100000 T = 150oC T = 150oC J J ) 10000 1000 A A n n ( T T N N E T = 125oC 1000 J E T = 125oC J R R 100 R R U U C C 100 T = 85oC GE J GE T = 85oC J A A 10 K K A A E 10 E L L , T = 25oC J S T = 25oC S S J S 1 I D I D 1 0.1 0.1 0 5 10 15 20 25 30 0 5 10 15 20 25 30 V , DRAIN-SOURCE VOLTAGE (V) DS V , DRAIN-SOURCE VOLTAGE (V) DS Figure 17. Q1 Typical Drain-Source Leakage Current Figure 18. Q2 Typical Drain-Source Leakage Current vs. Voltage vs. Voltage DMN3012LEG 6 of 10 March 2019 Document number: DS41633 Rev. 2 - 2
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