Datasheet FDN304P (ON Semiconductor) - 4
| Manufacturer | ON Semiconductor |
| Description | P-Channel 1.8V Specified PowerTrench MOSFET |
| Pages / Page | 8 / 4 — F DN30. Typical Characteristics. 4 P. NT (. , DRAIN CURRE. D-I. -ID, … |
| Revision | B |
| File Format / Size | PDF / 269 Kb |
| Document Language | English |
F DN30. Typical Characteristics. 4 P. NT (. , DRAIN CURRE. D-I. -ID, DRAIN CURRENT (A). DS, DRAIN-SOURCE VOLTAGE (V)
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Text Version of Document
F DN30 Typical Characteristics 4 P
15 4 V = -4.5V GS -2.5V -3.0V 3.5
)
12
A
-2.0V VGS = -1.5V 3
NT (
9 2.5 -1.8V -1.8V 2 6 -2.0V 1.5
, DRAIN CURRE
-2.5V
D-I
-3.0V 3 -1.5V 1 -4.5V 0.5 0 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5
-V -ID, DRAIN CURRENT (A) DS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.5 0.14 I ID = -1.2 A D = -2.4A 1.4 VGS = -4.5V 0.12 1.3 0.1 1.2 1.1 0.08 1 TA = 125oC 0.06 0.9 TA = 25oC 0.8 0.04 0.7 0.02 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5
o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage.
15 100 V V DS = - 5V T GS = 0V A = 25oC 10 12 -55oC 1 TA = 125oC 9 0.1 25oC 6 -55oC 0.01 3 0.001 0.0001 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.5 1 1.5 2 2.5 3
-V -V SD, BODY DIODE FORWARD VOLTAGE (V) GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDN304P Rev C(W)
15 4 V = -4.5V GS -2.5V -3.0V 3.5
)
12
A
-2.0V VGS = -1.5V 3
NT (
9 2.5 -1.8V -1.8V 2 6 -2.0V 1.5
, DRAIN CURRE
-2.5V
D-I
-3.0V 3 -1.5V 1 -4.5V 0.5 0 0 3 6 9 12 15 0 0.5 1 1.5 2 2.5
-V -ID, DRAIN CURRENT (A) DS, DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.5 0.14 I ID = -1.2 A D = -2.4A 1.4 VGS = -4.5V 0.12 1.3 0.1 1.2 1.1 0.08 1 TA = 125oC 0.06 0.9 TA = 25oC 0.8 0.04 0.7 0.02 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5
o TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with Temperature. Gate-to-Source Voltage.
15 100 V V DS = - 5V T GS = 0V A = 25oC 10 12 -55oC 1 TA = 125oC 9 0.1 25oC 6 -55oC 0.01 3 0.001 0.0001 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0 0.5 1 1.5 2 2.5 3
-V -V SD, BODY DIODE FORWARD VOLTAGE (V) GS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDN304P Rev C(W)
