Datasheet XPN12006NC (Toshiba) - 3

XPN12006NC 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V   ±10 µA Drain cut-off current IDSS VDS = 60 V, VGS = 0 V   10 Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 60   V V(BR)DSX ID = 10 mA, VGS = -20 V 40   Gate threshold voltage Vth VDS = 10 V, ID = 0.2 mA 1.5  2.5 Drain-source on-resistance RDS(ON) VGS = 4.5 V, ID = 10 A  14.8 23.7 mΩ VGS = 10 V, ID = 10 A  9.8 12.0 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz  1100  pF Reverse transfer capacitance Crss  70  Output capacitance Coss  600  Gate resistance rg  2.0 4.0 Ω Switching time (rise time) tr See Fig. 6.2.1  5  ns Switching time (turn-on time) ton  15  ns Switching time (fall time) tf  8  Switching time (turn-off time) toff  33  ns VDD ≈ 30 V VGS = 0 V/ 10 V ID = 10 A RL = 3 Ω RGG = 4.7 Ω RGS = 4.7 Ω Duty ≤ 1 %, tw = 10 µs Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Total gate charge (gate-source plus Qg VDD ≈ 48 V, VGS = 10 V, ID = 20 A  23  nC gate-drain) Gate-source charge 1 Qgs1  6  Gate-drain charge Qgd  4  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse drain current (pulsed) (Note 6) IDRP    60 A Diode forward voltage VDSF IDR = 20 A, VGS = 0 V   -1.2 V Note 6: Ensure that the channel temperature does not exceed 175 . ©2019-2020 3 2020-06-24 Toshiba Electronic Devices & Storage Corporation Rev.4.0