Datasheet EPC2207 (Efficient Power Conversion) - 3
| Manufacturer | Efficient Power Conversion |
| Description | Enhancement-Mode Power Transistor |
| Pages / Page | 6 / 3 — eGaN® FET DATASHEET. Figure 5a: Capacitance (Linear Scale). Figure 5b: … |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
eGaN® FET DATASHEET. Figure 5a: Capacitance (Linear Scale). Figure 5b: Capacitance (Log Scale). Capacitance (pF). VDS
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Text Version of Document
eGaN® FET DATASHEET
EPC2207
Figure 5a: Capacitance (Linear Scale) Figure 5b: Capacitance (Log Scale)
600 1000 500 100 400 COSS = CGD + CSD COSS = CGD + CSD 300 CISS = CGD + CGS 10 CISS = CGD + CGS CRSS = CGD CRSS = CGD
Capacitance (pF)
200
Capacitance (pF)
1 100 0 0.1 0 50 100 150 200 0 50 100 150 200
VDS V – Drain-to-Source Voltage (V) DS – Drain-to-Source Voltage (V) Figure 6: Output Charge and C Figure 7: Gate Charge OSS Stored Energy
40 3.0 5 I = 14 A 32 2.4
)
4 D V = 100 V
µJ
DS 24 1.8 3
Output Charge (nC) Stored Energy (
16 1.2 2
– C OSS – Gate-to-Source Voltage (V) Q OSS – E OSS
8 0.6
V GS
1 0 0.0 0 20 40 60 80 0 0 1 2 3 4 5
VDS – Drain-to-Source Voltage (V) Q – Gate Charge (nC) G Figure 8: Reverse Drain-Source Characteristics Figure 9: Normalized On-State Resistance vs. Temperature
2.0 50 ID = 14 A 25˚C
DS(on)
1.8 VGS = 5 V 40 125˚C VGS = 0 V 1.6 30 1.4 20 1.2
– Source-to-Drain Current (A) I SD
10
Normalized On-State Resistance R
1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.8 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
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EPC2207
Figure 5a: Capacitance (Linear Scale) Figure 5b: Capacitance (Log Scale)
600 1000 500 100 400 COSS = CGD + CSD COSS = CGD + CSD 300 CISS = CGD + CGS 10 CISS = CGD + CGS CRSS = CGD CRSS = CGD
Capacitance (pF)
200
Capacitance (pF)
1 100 0 0.1 0 50 100 150 200 0 50 100 150 200
VDS V – Drain-to-Source Voltage (V) DS – Drain-to-Source Voltage (V) Figure 6: Output Charge and C Figure 7: Gate Charge OSS Stored Energy
40 3.0 5 I = 14 A 32 2.4
)
4 D V = 100 V
µJ
DS 24 1.8 3
Output Charge (nC) Stored Energy (
16 1.2 2
– C OSS – Gate-to-Source Voltage (V) Q OSS – E OSS
8 0.6
V GS
1 0 0.0 0 20 40 60 80 0 0 1 2 3 4 5
VDS – Drain-to-Source Voltage (V) Q – Gate Charge (nC) G Figure 8: Reverse Drain-Source Characteristics Figure 9: Normalized On-State Resistance vs. Temperature
2.0 50 ID = 14 A 25˚C
DS(on)
1.8 VGS = 5 V 40 125˚C VGS = 0 V 1.6 30 1.4 20 1.2
– Source-to-Drain Current (A) I SD
10
Normalized On-State Resistance R
1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.8 0 25 50 75 100 125 150
VSD – Source-to-Drain Voltage (V) TJ – Junction Temperature (°C)
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