Datasheet AD8079 (Analog Devices) - 3
| Manufacturer | Analog Devices |
| Description | Dual 260 MHz Gain = +2.0 & +2.2 Buffer |
| Pages / Page | 12 / 3 — AD8079. ABSOLUTE MAXIMUM RATINGS1. MAXIMUM POWER DISSIPATION. 2.0. TJ = … |
| Revision | A |
| File Format / Size | PDF / 357 Kb |
| Document Language | English |
AD8079. ABSOLUTE MAXIMUM RATINGS1. MAXIMUM POWER DISSIPATION. 2.0. TJ = +150. 1.5. 1.0. 8-PIN SOIC PACKAGE. 0.5
Model Line for this Datasheet
Text Version of Document
AD8079 ABSOLUTE MAXIMUM RATINGS1 MAXIMUM POWER DISSIPATION
Supply Voltage . 12.6 V The maximum power that can be safely dissipated by the Internal Power Dissipation2 AD8079 is limited by the associated rise in junction tempera- Small Outline Package (R) . 0.9 Watts ture. The maximum safe junction temperature for plastic Input Voltage . ± VS encapsulated devices is determined by the glass transition tem- Output Short Circuit Duration perature of the plastic, approximately +150°C. Exceeding this . Observe Power Derating Curves limit temporarily may cause a shift in parametric performance Storage Temperature Range . –65°C to +125°C due to a change in the stresses exerted on the die by the package. Operating Temperature Range (A Grade) . – 40°C to +85°C Exceeding a junction temperature of +175°C for an extended Lead Temperature Range (Soldering 10 sec) . +300°C period can result in device failure. NOTES While the AD8079 is internally short circuit protected, this 1Stresses above those listed under “Absolute Maximum Ratings” may cause may not be sufficient to guarantee that the maximum junction permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the temperature (+150°C) is not exceeded under all conditions. To operational section of this specification is not implied. Exposure to absolute ensure proper operation, it is necessary to observe the maximum maximum rating conditions for extended periods may affect device reliability. power derating curves. 2Specification is for device in free air: 8-Pin SOIC Package: θJA = 160°C/Watt
2.0 TJ = +150
°
C 1.5 1.0 9 8-PIN SOIC PACKAGE 0.5 MAXIMUM POWER DISSIPATION – Watts 0–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE –
°
C
Figure 2. Plot of Maximum Power Dissipation vs. Temperature
ORDERING GUIDE Temperature Package Package Model Gain Range Description Option
AD8079AR G = +2.0 –40°C to +85°C 8-Pin Plastic SOIC SO-8 AD8079AR-REEL G = +2.0 –40°C to +85°C REEL SOIC SO-8 AD8079AR-REEL7 G = +2.0 –40°C to +85°C REEL 7 SOIC SO-8 AD8079BR G = +2.2 –40°C to +85°C 8-Pin Plastic SOIC SO-8 AD8079BR-REEL G = +2.2 –40°C to +85°C REEL SOIC SO-8 AD8079BR-REEL7 G = +2.2 –40°C to +85°C REEL 7 SOIC SO-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection.
WARNING!
Although the AD8079 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
ESD SENSITIVE DEVICE
REV. A –3–
Supply Voltage . 12.6 V The maximum power that can be safely dissipated by the Internal Power Dissipation2 AD8079 is limited by the associated rise in junction tempera- Small Outline Package (R) . 0.9 Watts ture. The maximum safe junction temperature for plastic Input Voltage . ± VS encapsulated devices is determined by the glass transition tem- Output Short Circuit Duration perature of the plastic, approximately +150°C. Exceeding this . Observe Power Derating Curves limit temporarily may cause a shift in parametric performance Storage Temperature Range . –65°C to +125°C due to a change in the stresses exerted on the die by the package. Operating Temperature Range (A Grade) . – 40°C to +85°C Exceeding a junction temperature of +175°C for an extended Lead Temperature Range (Soldering 10 sec) . +300°C period can result in device failure. NOTES While the AD8079 is internally short circuit protected, this 1Stresses above those listed under “Absolute Maximum Ratings” may cause may not be sufficient to guarantee that the maximum junction permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the temperature (+150°C) is not exceeded under all conditions. To operational section of this specification is not implied. Exposure to absolute ensure proper operation, it is necessary to observe the maximum maximum rating conditions for extended periods may affect device reliability. power derating curves. 2Specification is for device in free air: 8-Pin SOIC Package: θJA = 160°C/Watt
2.0 TJ = +150
°
C 1.5 1.0 9 8-PIN SOIC PACKAGE 0.5 MAXIMUM POWER DISSIPATION – Watts 0–50 –40 –30 –20 –10 0 10 20 30 40 50 60 70 80 90 AMBIENT TEMPERATURE –
°
C
Figure 2. Plot of Maximum Power Dissipation vs. Temperature
ORDERING GUIDE Temperature Package Package Model Gain Range Description Option
AD8079AR G = +2.0 –40°C to +85°C 8-Pin Plastic SOIC SO-8 AD8079AR-REEL G = +2.0 –40°C to +85°C REEL SOIC SO-8 AD8079AR-REEL7 G = +2.0 –40°C to +85°C REEL 7 SOIC SO-8 AD8079BR G = +2.2 –40°C to +85°C 8-Pin Plastic SOIC SO-8 AD8079BR-REEL G = +2.2 –40°C to +85°C REEL SOIC SO-8 AD8079BR-REEL7 G = +2.2 –40°C to +85°C REEL 7 SOIC SO-8
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection.
WARNING!
Although the AD8079 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
ESD SENSITIVE DEVICE
REV. A –3–
