Datasheet DMT47M2LDVQ (Diodes) - 3
| Manufacturer | Diodes |
| Description | Dual 40V N-Channel Enhancement Mode MOSFET PowerDI3333-8 |
| Pages / Page | 7 / 3 — DMT47M2LDVQ. www.diodes.com |
| File Format / Size | PDF / 498 Kb |
| Document Language | English |
DMT47M2LDVQ. www.diodes.com
Model Line for this Datasheet
Text Version of Document
DMT47M2LDVQ
50.0 20 V = 4.0V GS 45.0 V = 4.5V V = 5V GS DS V = 3.5V GS 40.0 ) 15 A ) ( 35.0 A( T V = 6.0V GS N T E N 30.0 V = 8.0V GS R V = 3.0V E R GS R V = 10V U GS R 25.0 U 10 C C N I N 20.0 A V = 2.8V I GS R A D R , 15.0 D , I D I D 5 TJ = 85℃ 10.0 V = 2.5V TJ = 150℃ V = 2.3V GS T GS J = 25℃ 5.0 TJ = 125℃ TJ = -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
) 0.04 Ω ) ( Ω( E 0.014 C E N C N TA S TA 0.03 I S S I E 0.012 S R E - V = 4.5V R- GS I = 20A D ON ON E E 0.02 C I = 10A D R 0.01 C R OU S OU - V = 10V S N GS - I N A I 0.01 R 0.008 A D R , D ) , N ) O N ( O S ( D S R D 0.006 R 0 0 5 10 15 20 0 2 4 6 8 10 I , DRAIN-SOURCE CURRENT (A) V , GATE-SOURCE VOLTAGE (V) D GS Figure 3. Typical On-Resistance vs. Drain Current Figure 4. Typical Transfer Characteristic and Gate Voltage
0.02 ) 1.6 Ω( V = 10V GS E V = 10V, I = 20A E 0.018 GS D C C N N 0.016 TA 1.4 TA T S S J = 150℃ I I S S 0.014 E E R R - ) - TJ = 125℃ D 0.012 1.2 ON ON T ZE J = 85℃ E I E L 0.01 C C R A R M T V = 4.5V, I = 10A GS D 0.008 J = 25℃ OU OU OR 1 S S - N - N ( N I I 0.006 TJ = -55℃ A A R R D D 0.004 , ) 0.8 , N ) O N ( O S ( 0.002 D S D R R 0 0.6 0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 I , DRAIN CURRENT (A) T , JUNCTION TEMPERATURE (℃) D J Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Junction Junction Temperature Temperature
DMT47M2LDVQ 3 of 7 May 2019 Document number: DS41516 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated
50.0 20 V = 4.0V GS 45.0 V = 4.5V V = 5V GS DS V = 3.5V GS 40.0 ) 15 A ) ( 35.0 A( T V = 6.0V GS N T E N 30.0 V = 8.0V GS R V = 3.0V E R GS R V = 10V U GS R 25.0 U 10 C C N I N 20.0 A V = 2.8V I GS R A D R , 15.0 D , I D I D 5 TJ = 85℃ 10.0 V = 2.5V TJ = 150℃ V = 2.3V GS T GS J = 25℃ 5.0 TJ = 125℃ TJ = -55℃ 0.0 0 0 0.5 1 1.5 2 2.5 3 0 1 2 3 4 V , DRAIN-SOURCE VOLTAGE (V) V , GATE-SOURCE VOLTAGE (V) DS GS Figure 1. Typical Output Characteristic
Figure 2. Typical Transfer Characteristic
) 0.04 Ω ) ( Ω( E 0.014 C E N C N TA S TA 0.03 I S S I E 0.012 S R E - V = 4.5V R- GS I = 20A D ON ON E E 0.02 C I = 10A D R 0.01 C R OU S OU - V = 10V S N GS - I N A I 0.01 R 0.008 A D R , D ) , N ) O N ( O S ( D S R D 0.006 R 0 0 5 10 15 20 0 2 4 6 8 10 I , DRAIN-SOURCE CURRENT (A) V , GATE-SOURCE VOLTAGE (V) D GS Figure 3. Typical On-Resistance vs. Drain Current Figure 4. Typical Transfer Characteristic and Gate Voltage
0.02 ) 1.6 Ω( V = 10V GS E V = 10V, I = 20A E 0.018 GS D C C N N 0.016 TA 1.4 TA T S S J = 150℃ I I S S 0.014 E E R R - ) - TJ = 125℃ D 0.012 1.2 ON ON T ZE J = 85℃ E I E L 0.01 C C R A R M T V = 4.5V, I = 10A GS D 0.008 J = 25℃ OU OU OR 1 S S - N - N ( N I I 0.006 TJ = -55℃ A A R R D D 0.004 , ) 0.8 , N ) O N ( O S ( 0.002 D S D R R 0 0.6 0 5 10 15 20 -50 -25 0 25 50 75 100 125 150 I , DRAIN CURRENT (A) T , JUNCTION TEMPERATURE (℃) D J Figure 5. Typical On-Resistance vs. Drain Current and Figure 6. On-Resistance Variation with Junction Junction Temperature Temperature
DMT47M2LDVQ 3 of 7 May 2019 Document number: DS41516 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated
