Datasheet PN200A, MMBT200 (ON Semiconductor) - 4

β β β β β
PN200 Typical Performance Characteristics
(Continued)
A / MMBT200 — PNP Ge ) (V E
100
G
4
A f = 1.0 MHz T L Ta = 25°C ) VO F
3
p ER ( E ITT M
10
-E
2
Ic = 100 uA 50 mA 300 mA TANC R CI Cib O A T P Cob CA
1
LLEC O neral- C - CE
0 0.1 1 10 100
V
100 300 700 2000 4000
V CE - COLLECTOR VOLTAGE (V) Pur I B - BASE CURRENT (uA) Figure 9. Collector Saturation Region Figure 10. Input and Output Capacitance vs. p Reverse Voltage ose Am z) H
40
M
300
( V = 5V
270
plif ce t CT s
240
DU
30
ier
210
RO
180
H P IB1 = IB2 = Ic / 10 T (nS)
20
E
150
V = 10 V cc ID M W
120
TI ND
90 10
t f t r BA
60
IN
30
t d - GA
0 0
T
1 10 20 50 100 150 10 20 30 50 100 200 300
f I I - COLLECT C OR CURRENT (mA) C - COLLECTOR CURRENT (mA) Figure 11. Gain Bandwidth Product vs. Figure 12. Switching Times vs. Collector Current Collector Current
700
) W m
600
N ( IO
500
TO-92 IPAT
400
SOT-23 S S
300
R DI E W
200
O - P
100
D P
0 0 25 50 75 100 125 150
TEMPER ATURE ( C ° ) Figure 13. Power Dissipation vs. Ambient Temperature
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