Datasheet SiHH070N60EF (Vishay)
| Manufacturer | Vishay |
| Description | EF Series Power MOSFET With Fast Body Diode |
| Pages / Page | 9 / 1 — SiHH070N60EF. EF Series Power MOSFET With Fast Body Diode. FEATURES. … |
| File Format / Size | PDF / 184 Kb |
| Document Language | English |
SiHH070N60EF. EF Series Power MOSFET With Fast Body Diode. FEATURES. PowerPAK® 8 x 8. APPLICATIONS. PRODUCT SUMMARY
Model Line for this Datasheet
Text Version of Document
SiHH070N60EF
www.vishay.com Vishay Siliconix
EF Series Power MOSFET With Fast Body Diode FEATURES
Pin 4: drain • 4th generation E series technology
PowerPAK® 8 x 8
• Low figure-of-merit (FOM) Ron x Qg Pin 1: • Low effective capacitance (Co(er)) gate 4 • Reduced switching and conduction losses 1 Pin 2: • Avalanche energy rated (UIS) 2 Kelvin connection • Material categorization: for definitions of compliance 3 Pin 3: source 3 please see www.vishay.com/doc?99912 N-Channel MOSFET
APPLICATIONS
• Server and telecom power supplies • Switch mode power supplies (SMPS)
PRODUCT SUMMARY
• Power factor correction power supplies (PFC) VDS (V) at TJ max. 650 • Lighting RDS(on) typ. (Ω) at 25 °C VGS = 10 V 0.061 - High-intensity discharge (HID) Qg max. (nC) 75 - Fluorescent ballast lighting Qgs (nC) 20 • Industrial Qgd (nC) 17 - Welding Configuration Single - Induction heating - Motor drives - Battery chargers - Solar (PV inverters)
ORDERING INFORMATION
Package PowerPAK 8 x 8 Lead (Pb)-free and halogen-free SiHH070N60EF-T1GE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 600 V Gate-source voltage VGS ± 30 TC = 25 °C 36 Continuous drain current (TJ = 150 °C) VGS at 10 V ID TC = 100 °C 23 A Pulsed drain current a IDM 93 Linear derating factor 1.6 W/°C Single pulse avalanche energy b EAS 226 mJ Maximum power dissipation PD 202 W Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Drain-source voltage slope TJ = 125 °C 100 dv/dt V/ns Reverse diode dv/dt d 50
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4 A c. 1.6 mm from case d. ISD ≤ ID, di/dt = 900 A/μs, starting TJ = 25 °C S20-0109-Rev. B, 02-Mar-2020
1
Document Number: 92290 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
EF Series Power MOSFET With Fast Body Diode FEATURES
Pin 4: drain • 4th generation E series technology
PowerPAK® 8 x 8
• Low figure-of-merit (FOM) Ron x Qg Pin 1: • Low effective capacitance (Co(er)) gate 4 • Reduced switching and conduction losses 1 Pin 2: • Avalanche energy rated (UIS) 2 Kelvin connection • Material categorization: for definitions of compliance 3 Pin 3: source 3 please see www.vishay.com/doc?99912 N-Channel MOSFET
APPLICATIONS
• Server and telecom power supplies • Switch mode power supplies (SMPS)
PRODUCT SUMMARY
• Power factor correction power supplies (PFC) VDS (V) at TJ max. 650 • Lighting RDS(on) typ. (Ω) at 25 °C VGS = 10 V 0.061 - High-intensity discharge (HID) Qg max. (nC) 75 - Fluorescent ballast lighting Qgs (nC) 20 • Industrial Qgd (nC) 17 - Welding Configuration Single - Induction heating - Motor drives - Battery chargers - Solar (PV inverters)
ORDERING INFORMATION
Package PowerPAK 8 x 8 Lead (Pb)-free and halogen-free SiHH070N60EF-T1GE3
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage VDS 600 V Gate-source voltage VGS ± 30 TC = 25 °C 36 Continuous drain current (TJ = 150 °C) VGS at 10 V ID TC = 100 °C 23 A Pulsed drain current a IDM 93 Linear derating factor 1.6 W/°C Single pulse avalanche energy b EAS 226 mJ Maximum power dissipation PD 202 W Operating junction and storage temperature range TJ, Tstg -55 to +150 °C Drain-source voltage slope TJ = 125 °C 100 dv/dt V/ns Reverse diode dv/dt d 50
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 4 A c. 1.6 mm from case d. ISD ≤ ID, di/dt = 900 A/μs, starting TJ = 25 °C S20-0109-Rev. B, 02-Mar-2020
1
Document Number: 92290 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
