Datasheet IRF6775MTRPbF (Infineon)
| Manufacturer | Infineon |
| Description | Digital Audio MOSFET |
| Pages / Page | 10 / 1 — DIGITAL AUDIO MOSFET. IRF6775MTRPbF. Features. Key Parameters. … |
| File Format / Size | PDF / 243 Kb |
| Document Language | English |
DIGITAL AUDIO MOSFET. IRF6775MTRPbF. Features. Key Parameters. Description. Absolute Maximum Ratings. Parameter. Max. Units
Model Line for this Datasheet
Text Version of Document
DIGITAL AUDIO MOSFET IRF6775MTRPbF Features Key Parameters
• Latest MOSFET Silicon technology VDS 150 V • Key parameters optimized for Class-D audio amplifier R applications DS(on) typ. @ VGS = 10V 47 m: • Low RDS(on) for improved efficiency Qg typ. 25.0 nC • Low Qg for better THD and improved efficiency R • Low Q G(int) max. 3.0 rr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 250W per channel into 4Ω Load in Half-Bridge Configuration Amplifier 5 • Dual sided cooling compatible & ) & · Compatible with existing surface mount technologies 5 · RoHS compliant containing no lead or bromide ·Lead-Free (Qualified up to 260°C Reflow) DirectFET
ISOMETRIC
MZ
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST SH MQ MX MT MN
MZ Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6775MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 150 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 28 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.9 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.9 IDM Pulsed Drain Current c 39 PD @TC = 25°C Maximum Power Dissipation 89 W PD @TA = 25°C Power Dissipation e 2.8 PD @TA = 70°C Power Dissipation e 1.8 EAS Single Pulse Avalanche Energyd 33 mJ IAR Avalanche Currentc 5.6 A Linear Derating Factor e 0.022 W/°C TJ Operating Junction and -40 to + 150 °C TSTG Storage Temperature Range
Thermal Resistance Parameter Typ. Max. Units
RθJA Junction-to-Ambient ek ––– 45 °C/W RθJA Junction-to-Ambient hk 12.5 ––– RθJA Junction-to-Ambient ik 20 ––– RθJC Junction-to-Case jk ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.4 ––– Notes through are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014
• Latest MOSFET Silicon technology VDS 150 V • Key parameters optimized for Class-D audio amplifier R applications DS(on) typ. @ VGS = 10V 47 m: • Low RDS(on) for improved efficiency Qg typ. 25.0 nC • Low Qg for better THD and improved efficiency R • Low Q G(int) max. 3.0 rr for better THD and lower EMI • Low package stray inductance for reduced ringing and lower EMI • Can deliver up to 250W per channel into 4Ω Load in Half-Bridge Configuration Amplifier 5 • Dual sided cooling compatible & ) & · Compatible with existing surface mount technologies 5 · RoHS compliant containing no lead or bromide ·Lead-Free (Qualified up to 260°C Reflow) DirectFET
ISOMETRIC
MZ
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details) SQ SX ST SH MQ MX MT MN
MZ Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6775MPbF device utilizes DirectFETTM packaging technology. DirectFETTM packaging technology offers lower parasitic inductance and resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage ringing that accompanies fast current transients. The DirectFETTM package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing method and processes. The DirectFETTM package also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resis- tance and power dissipation. These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Absolute Maximum Ratings Parameter Max. Units
VDS Drain-to-Source Voltage 150 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 28 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.9 A ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.9 IDM Pulsed Drain Current c 39 PD @TC = 25°C Maximum Power Dissipation 89 W PD @TA = 25°C Power Dissipation e 2.8 PD @TA = 70°C Power Dissipation e 1.8 EAS Single Pulse Avalanche Energyd 33 mJ IAR Avalanche Currentc 5.6 A Linear Derating Factor e 0.022 W/°C TJ Operating Junction and -40 to + 150 °C TSTG Storage Temperature Range
Thermal Resistance Parameter Typ. Max. Units
RθJA Junction-to-Ambient ek ––– 45 °C/W RθJA Junction-to-Ambient hk 12.5 ––– RθJA Junction-to-Ambient ik 20 ––– RθJC Junction-to-Case jk ––– 1.4 RθJ-PCB Junction-to-PCB Mounted 1.4 ––– Notes through are on page 2 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback February 26, 2014
