Datasheet IRF7822PBF (International Rectifier) - 3
| Manufacturer | International Rectifier |
| Description | HEXFET Power MOSFET for DC-DC Converters |
| Pages / Page | 6 / 3 — Fig 1. Fig 2. Fig 3. Fig 4 |
| File Format / Size | PDF / 147 Kb |
| Document Language | English |
Fig 1. Fig 2. Fig 3. Fig 4
Model Line for this Datasheet
Text Version of Document
IRF7822PbF 2.0 6 ID = 15A ID = 15A V = 24V DS esistance 5 1.5 n R age (V) 4 ource O alized) 1.0 e Volt -S orm (N 2 o-Sourc rain-to e-t 0.5 Gat 1 GS (on) V , S , DDR V = GS 4.5V 0.0 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 0 10 20 30 40 50 T , Junction Temperature ( C ° ) J Q , Total Gate Charge (nC) G
Fig 1.
Normalized On-Resistance
Fig 2.
Typical Gate Charge Vs. Vs. Temperature Gate-to-Source Voltage 100000 VGS = 0V, f = 1 MHZ C ) iss = Cgs + Cgd, Cds SHORTED 0.010 Ω( C rss = Cgd ec Coss = Cds + Cgd n 0.009 a ) t F si p10000 s ( e e 0.008 c R n Ciss n ati O c e 0.007 a c ID = 15A p r a uo C Coss , 1000 S- 0.006 C ot-ni Crss a 0.005 r D , )n 0.004 o 100 ( S 1 10 100 DR 0.003 VDS, Drain-to-Source Voltage (V) 3.0 4.0 5.0 6.0 7.0 VGS, Gate -to -Source Voltage (V)
Fig 3.
On-Resistance Vs. Gate Voltage
Fig 4.
Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com 3
Fig 1.
Normalized On-Resistance
Fig 2.
Typical Gate Charge Vs. Vs. Temperature Gate-to-Source Voltage 100000 VGS = 0V, f = 1 MHZ C ) iss = Cgs + Cgd, Cds SHORTED 0.010 Ω( C rss = Cgd ec Coss = Cds + Cgd n 0.009 a ) t F si p10000 s ( e e 0.008 c R n Ciss n ati O c e 0.007 a c ID = 15A p r a uo C Coss , 1000 S- 0.006 C ot-ni Crss a 0.005 r D , )n 0.004 o 100 ( S 1 10 100 DR 0.003 VDS, Drain-to-Source Voltage (V) 3.0 4.0 5.0 6.0 7.0 VGS, Gate -to -Source Voltage (V)
Fig 3.
On-Resistance Vs. Gate Voltage
Fig 4.
Typical Capacitance Vs. Drain-to-Source Voltage www.irf.com 3
