Datasheet IRF7389PbF (Infineon) - 8
| Manufacturer | Infineon |
| Description | HEXFET Power MOSFET |
| Pages / Page | 10 / 8 — Fig 20. Fig 21. Fig 22 |
| File Format / Size | PDF / 265 Kb |
| Document Language | English |
Fig 20. Fig 21. Fig 22
Model Line for this Datasheet
Text Version of Document
IRF7389PbF P-Channel 1400 20 VGS = 0V f = 1 MHz ID = -4.9A Ciss = Cgs + Cgd + Cds SHORTED V =-15V DS 1200 Crss = Cgd Coss = Cds + Cgd 16 ) 1000 Ciss 12 800 tance (pF Coss 600 apaci 8 , C C 400 Crss 4 GS 200 -V , Gate-to-Source Voltage (V) 0 A 0 1 10 100 0 10 20 30 40 - Q , Total Gate Charge (nC) G DS V , Drain-to-Source Voltage (V)
Fig 20.
Typical Capacitance Vs.
Fig 21.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 D = 0.50 thJA(Z ) 10 0.20 0.10 0.05 esponse PDM al R 0.02 1 m t1 0.01 her t2 T Notes: SINGLE PULSE 1. Duty factor D = t / t (THERMAL RESPONSE) 1 2 2. Peak TJ= P DM x ZthJA + TA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1
Fig 22.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com
Fig 20.
Typical Capacitance Vs.
Fig 21.
Typical Gate Charge Vs. Drain-to-Source Voltage Gate-to-Source Voltage 100 D = 0.50 thJA(Z ) 10 0.20 0.10 0.05 esponse PDM al R 0.02 1 m t1 0.01 her t2 T Notes: SINGLE PULSE 1. Duty factor D = t / t (THERMAL RESPONSE) 1 2 2. Peak TJ= P DM x ZthJA + TA 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Rectangular Pulse Duration (sec) 1
Fig 22.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com
