Datasheet HMC1126 (Analog Devices) - 13

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Data Sheet HMC1126 APPLICATIONS INFORMATION
The HMC1126 is a GaAs, pHEMT, MMIC, cascode distributed
0.102mm (0.004") THICK GaAs MMIC
power amplifier. The cascode distributed amplifier uses a fundamental cell of
WIRE BOND
two FETs in series, source to drain. This fundamental cell then
0.076mm
duplicates a number of times. The major benefit of this is an
(0.003")
increase in the operation bandwidth. The basic schematic for a fundamental cell is given in Figure 35.
RF GROUND PLANE VDD RFOUT VGG2 0.127mm (0.005") THICK ALUMINA THIN FILM SUBSTRATE
7 -03 3
RFIN
08 13 39 0 Figure 36. Die Without the Moly Tab 3- 08
VGG1
13 Figure 35. Fundamental Cell Schematic
0.102mm (0.004") THICK GaAs MMIC
The recommended bias sequence during power up is the
WIRE BOND
following:
0.076mm (0.003")
1. Connect GND. 2. Set VGG1 to −2 V. 3. Set VDD to 5 V. 4. Set V
RF GROUND PLANE
GG2 to 1.4 V. 5. Increase VGG1 to achieve a typical quiescent current (IDQ) =
0.150mm (0.005") THICK
65 mA.
MOLY TAB
6. Apply the RF signal.
0.254mm (0.010") THICK ALUMINA THIN FILM SUBSTRATE
8 -03 The recommended bias sequence during power down is the 083 13 following: Figure 37. Die With the Moly Tab 1. Turn off the RF signal. Place microstrip substrates as close to the die as possible to 2. Decrease VGG1 to −2 V to achieve IDQ = 0 mA. minimize bond wire length. Typical die to substrate spacing is 3. Decrease VGG2 to 0 V. 0.076 mm to 0.152 mm (3 mil to 6 mil). 4. Decrease VDD to 0 V. 5. Increase V
Handling Precautions
GG1 to 0 V. To avoid permanent damage, follow these storage, cleanliness,
MOUNTING AND BONDING TECHNIQUES FOR
static sensitivity, transient, and general handling precautions:
MILLIMETERWAVE GaAs MMICS
Place all bare die in either waffle or gel-based ESD Attach the die directly to the ground plane eutectically or with protective containers and then seal the die in an ESD conductive epoxy (see the Handling Precautions section, the protective bag for shipment. Once the sealed ESD Mounting section, and the Wire Bonding section). protective bag is opened, store all die in a dry nitrogen Microstrip, 50 Ω, transmission lines on 0.127 mm (5 mil) thick environment. alumina, thin film substrates are recommended for bringing the Handle the chips in a clean environment. Do not attempt radio frequency to and from the chip (see Figure 36). When using to clean the chip using liquid cleaning systems. 0.254 mm (10 mil) thick alumina, thin film substrates, raise the Follow ESD precautions to protect against ESD strikes. die 0.150 mm (6 mils) to ensure that the surface of the die is While bias is applied, suppress instrument and bias supply coplanar with the surface of the substrate. One way to accomplish transients. Use shielded signal and bias cables to minimize this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm inductive pick up. (6 mil) thick, molybdenum (Mo) heat spreader (moly tab) which Handle the chip along the edges with a vacuum collet or can then be attached to the ground plane (see Figure 36 and with a sharp pair of bent tweezers. The surface of the chip Figure 37). may have fragile air bridges and must not be touched with vacuum collet, tweezers, or fingers. Rev. C | Page 13 of 16 Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION TABLE OF CONTENTS REVISION HISTORY ELECTRICAL SPECIFICATIONS 2 GHz TO 10 GHz FREQUENCY RANGE 10 GHz TO 26 GHz FREQUENCY RANGE 26 GHz TO 40 GHz FREQUENCY RANGE 40 GHz TO 50 GHz FREQUENCY RANGE ABSOLUTE MAXIMUM RATINGS ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS APPLICATIONS INFORMATION MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS Handling Precautions Mounting Wire Bonding APPLICATION CIRCUIT ASSEMBLY DIAGRAM OUTLINE DIMENSIONS ORDERING GUIDE