Datasheet STD30NF06L (STMicroelectronics) - 3
| Manufacturer | STMicroelectronics |
| Description | N-Channel 60V - 0.022Ω - 35A DPAK/IPAK STripFET Power MOSFET |
| Pages / Page | 10 / 3 — STD30NF06L. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test … |
| File Format / Size | PDF / 476 Kb |
| Document Language | English |
STD30NF06L. ELECTRICAL CHARACTERISTICS. Symbol. Parameter. Test Conditions. Min. Typ. Max. Unit. Safe Operating Area
Model Line for this Datasheet
Text Version of Document
STD30NF06L ELECTRICAL CHARACTERISTICS
(CONTINUED) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V, ID = 18 A 30 ns RG = 4.7Ω VGS = 4.5 V tr Rise Time (see test circuit, Figure 3) 105 ns Qg Total Gate Charge VDD = 48 V, ID = 38 A, 23 31 nC Qgs Gate-Source Charge VGS = 5 V 7 nC Q Gate-Drain Charge 10 nC gd SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off-Delay Time VDD = 30 V, ID = 18 A, 65 ns tf Fall Time RG = 4.7Ω, VGS = 4.5 V 25 ns (see test circuit, Figure 3) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 35 A ISDM (2) Source-drain Current (pulsed) 140 A VSD (1) Forward On Voltage ISD = 35 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 38 A, di/dt = 100 A/µs, 70 ns Qrr Reverse Recovery Charge VDD = 15 V, Tj = 150°C 140 nC IRRM Reverse Recovery Current (see test circuit, Figure 5) 4 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area Normalized Thermal Impedence
3/10
(CONTINUED) SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on) Turn-on Delay Time VDD = 30 V, ID = 18 A 30 ns RG = 4.7Ω VGS = 4.5 V tr Rise Time (see test circuit, Figure 3) 105 ns Qg Total Gate Charge VDD = 48 V, ID = 38 A, 23 31 nC Qgs Gate-Source Charge VGS = 5 V 7 nC Q Gate-Drain Charge 10 nC gd SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(off) Turn-off-Delay Time VDD = 30 V, ID = 18 A, 65 ns tf Fall Time RG = 4.7Ω, VGS = 4.5 V 25 ns (see test circuit, Figure 3) SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD Source-drain Current 35 A ISDM (2) Source-drain Current (pulsed) 140 A VSD (1) Forward On Voltage ISD = 35 A, VGS = 0 1.5 V trr Reverse Recovery Time ISD = 38 A, di/dt = 100 A/µs, 70 ns Qrr Reverse Recovery Charge VDD = 15 V, Tj = 150°C 140 nC IRRM Reverse Recovery Current (see test circuit, Figure 5) 4 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area.
Safe Operating Area Normalized Thermal Impedence
3/10
