Datasheet TIPL762, TIPL762A (Bourns) - 4

ManufacturerBourns
DescriptionNPN SILICON POWER TRANSISTORS
Pages / Page6 / 4 — TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS. TYPICAL CHARACTERISTICS. …
File Format / SizePDF / 167 Kb
Document LanguageEnglish

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS. TYPICAL CHARACTERISTICS. TYPICAL DC CURRENT GAIN

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN

Model Line for this Datasheet

Text Version of Document

TIPL762, TIPL762A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN COLLECTOR-EMITTER SATURATION VOLTAGE vs vs COLLECTOR CURRENT BASE CURRENT
TCP762AE TCP762AH
100 5·0 V = 5 V T = 125°C I = 1 A CE C - V C e T = 25°C I = 2 A C g C T = -65°C lta I = 4 A C C in 4·0 a Vo I = 6 A n C o t G ti T = 25°C C n ra rre tu u 3·0 C C r Sa 10 l D itte ica 2·0 yp r-Em T to - c FE lle h - Co 1·0 ) (sat E C V
E
1·0 0 0·1 1·0 10 0 0·5 1·0 1·5 2·0 2·5 I - Collector Current - A I - Base Current - A C B Figure 3. Figure 4. COLLECTOR-EMITTER SATURATION VOLTAGE BASE-EMITTER SATURATION VOLTAGE vs vs BASE CURRENT BASE CURRENT
TCP762AI TCP762AJ
5·0 1·2 - V I = 1 A C T = 25°C
OBSOLET
e C g I = 2 A - V C e lta I = 4 A g C lta Vo 4·0 I = 6 A 1·1 n C o Vo ti T = 100°C n C o ra ti tu ra 3·0 tu 1·0 r Sa r Sa itte itte r-Em 2·0 m 0·9 to -E c e s lle - Ba I = 6 A ) C - Co 1·0 0·8 ) (sat I = 4 A E C (sat B E V I = 2 A C C V I = 1 A C 0 0·7 0 0·5 1·0 1·5 2·0 2·5 0 0·2 0·4 0·6 0·8 1·0 1·2 1·4 1·6 1·8 2·0 I - Base Current - A I - Base Current - A B B Figure 5. Figure 6.
AUGUST 1978 - REVISED SEPTEMBER 2002 4 Specifications are subject to change without notice.
EMS supplier