Datasheet CMDSH-3 (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | SURFACE MOUNT SILICON SCHOTTKY DIODE |
| Pages / Page | 5 / 1 — CMDSH-3. w w w. c e n t r a l s e m i . c o m. SURFACE MOUNT SILICON. … |
| File Format / Size | PDF / 522 Kb |
| Document Language | English |
CMDSH-3. w w w. c e n t r a l s e m i . c o m. SURFACE MOUNT SILICON. DESCRIPTION:. SCHOTTKY DIODE. MARKING CODE: S1. SOD-323 CASE
Model Line for this Datasheet
Text Version of Document
CMDSH-3 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DESCRIPTION: SCHOTTKY DIODE
The CENTRAL SEMICONDUCTOR CMDSH-3 is a silicon Schottky diode, manufactured in an SOD-323 surface mount package, designed for fast switching applications requiring a low forward voltage drop.
MARKING CODE: S1 SOD-323 CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 30 V Average Forward Current IO 100 mA Peak Forward Surge Current, tp=10ms IFSM 750 mA Power Dissipation PD 250 mW Power Dissipation (TL=25°C) PD 833 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 500 °C/W Thermal Resistance ΘJL 150 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=25V 1.0 μA BVR IF=100μA 30 V VF IF=2.0mA 0.29 V VF IF=15mA 0.37 V VF IF=50mA 0.44 0.55 V VF IF=100mA 0.51 0.80 V CJ VR=1.0V, f=1.0MHz 7.0 pF R9 (11-February 2016)
The CENTRAL SEMICONDUCTOR CMDSH-3 is a silicon Schottky diode, manufactured in an SOD-323 surface mount package, designed for fast switching applications requiring a low forward voltage drop.
MARKING CODE: S1 SOD-323 CASE MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 30 V Average Forward Current IO 100 mA Peak Forward Surge Current, tp=10ms IFSM 750 mA Power Dissipation PD 250 mW Power Dissipation (TL=25°C) PD 833 mW Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C Thermal Resistance ΘJA 500 °C/W Thermal Resistance ΘJL 150 °C/W
ELECTRICAL CHARACTERISTICS:
(TA=25°C)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=25V 1.0 μA BVR IF=100μA 30 V VF IF=2.0mA 0.29 V VF IF=15mA 0.37 V VF IF=50mA 0.44 0.55 V VF IF=100mA 0.51 0.80 V CJ VR=1.0V, f=1.0MHz 7.0 pF R9 (11-February 2016)
