Datasheet BC640-016G (ON Semiconductor) - 3
| Manufacturer | ON Semiconductor |
| Description | High Current Transistors PNP Silicon |
| Pages / Page | 4 / 3 — BC640−016G. Figure 1. Active Region Safe Operating Area. Figure 2. DC … |
| Revision | A |
| File Format / Size | PDF / 91 Kb |
| Document Language | English |
BC640−016G. Figure 1. Active Region Safe Operating Area. Figure 2. DC Current Gain. Figure 3. Current Gain Bandwidth Product
Model Line for this Datasheet
Text Version of Document
BC640−016G
-1000 500 -500 V SOA = 1S CE = -2 V -B (mA) -200 PD TA 25°C 200 -100 GAIN -A -50 PD TC 25°C -L 100 OR CURRENT -20 -10 , DC CURRENT FE 50 , COLLECT h -5 I C BC636 PD TA 25°C -2 BC638 PD TC 25°C BC640 -1 20 -1 -2 -3 -4 -5 -7 -10 -20 -30 -40 -50 -70 -100 -1 -3 -5 -10 -30 -50 -100 -300 -500 -1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain
500 -1 (MHz) 300 -0.8 VBE(sat) @ IC/IB = 10 TS) -0.6 VBE(on) @ VCE = -2 V VCE = -2 V 100 TAGE (VOL -0.4 , VOL V 50 -0.2 VCE(sat) @ IC/IB = 10 20 0 f, CURRENT-GAIN — BANDWIDTH PRODUCT T -1 -10 -100 -1000 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain Bandwidth Product Figure 4. “Saturation” and “On” Voltages
-0.2 C) ° -1.0 VCE = -2 VOLTS TURE COEFFICIENTS (mV/ DT = 0°C to +100°C -1.6 qV for VBE , TEMPERA Vθ -2.2 -1 -3 -5 -10 -30 -50 -100 -300 -500 -1000 IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients http://onsemi.com 3
-1000 500 -500 V SOA = 1S CE = -2 V -B (mA) -200 PD TA 25°C 200 -100 GAIN -A -50 PD TC 25°C -L 100 OR CURRENT -20 -10 , DC CURRENT FE 50 , COLLECT h -5 I C BC636 PD TA 25°C -2 BC638 PD TC 25°C BC640 -1 20 -1 -2 -3 -4 -5 -7 -10 -20 -30 -40 -50 -70 -100 -1 -3 -5 -10 -30 -50 -100 -300 -500 -1000 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 1. Active Region Safe Operating Area Figure 2. DC Current Gain
500 -1 (MHz) 300 -0.8 VBE(sat) @ IC/IB = 10 TS) -0.6 VBE(on) @ VCE = -2 V VCE = -2 V 100 TAGE (VOL -0.4 , VOL V 50 -0.2 VCE(sat) @ IC/IB = 10 20 0 f, CURRENT-GAIN — BANDWIDTH PRODUCT T -1 -10 -100 -1000 -1 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 3. Current Gain Bandwidth Product Figure 4. “Saturation” and “On” Voltages
-0.2 C) ° -1.0 VCE = -2 VOLTS TURE COEFFICIENTS (mV/ DT = 0°C to +100°C -1.6 qV for VBE , TEMPERA Vθ -2.2 -1 -3 -5 -10 -30 -50 -100 -300 -500 -1000 IC, COLLECTOR CURRENT (mA)
Figure 5. Temperature Coefficients http://onsemi.com 3
