Datasheet FDS7788 (Fairchild) - 2
| Manufacturer | Fairchild |
| Description | 30V N-Channel PowerTrench MOSFET |
| Pages / Page | 5 / 2 — FDS. Electrical Characteristics. 7788. Symbol. Parameter. Test … |
| File Format / Size | PDF / 115 Kb |
| Document Language | English |
FDS. Electrical Characteristics. 7788. Symbol. Parameter. Test Conditions. Min. Typ. Max Units. Off Characteristics. On Characteristics
Model Line for this Datasheet
Text Version of Document
FDS Electrical Characteristics
T = 25°C unless otherwise noted
7788
A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 25 mV/°C ∆TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C –5.4 mV/°C ∆TJ Temperature Coefficient RDS(on) Static Drain–Source VGS = 10 V, ID = 18 A 3.0 4.0 mΩ On–Resistance VGS = 4.5 V, ID = 17 A 3.8 5.0 VGS = 10 V, ID = 18 A, TJ = 125°C 4.3 6.3 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 30 A gFS Forward Transconductance VDS = 10 V, ID = 18 A 112 S
Dynamic Characteristics
Ciss Input Capacitance 3845 pF VDS = 15 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 930 pF Crss Reverse Transfer Capacitance 368 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4 Ω
Switching Characteristics (Note 2)
t V d(on) Turn–On Delay Time DD = 15 V, ID = 1 A, 15 27 ns V t GS = 10 V, RGEN = 6 Ω r Turn–On Rise Time 13 23 ns td(off) Turn–Off Delay Time 62 99 ns tf Turn–Off Fall Time 36 58 ns Q V g Total Gate Charge DS = 15 V, ID = 18 A, 37 48 nC V Q GS = 5.0 V gs Gate–Source Charge 10 nC Qgd Gate–Drain Charge 14 nC
Drain–Source Diode Characteristics and Maximum Ratings
Drain–Source Diode Forward VSD V Voltage GS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time IF = 18 A, 39 nS Q diF/dt = 100 A/µs rr Diode Reverse Recovery Charge 33 nC
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 50°C/W when b) 105°C/W when c) 125°C/W when mounted on a mounted on a 1in2 mounted on a .04 in2 minimum pad. pad of 2 oz copper pad of 2 oz copper Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7788 Rev F(W)
T = 25°C unless otherwise noted
7788
A
Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 25 mV/°C ∆TJ Coefficient IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA IGSSF Gate–Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –20 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V ∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C –5.4 mV/°C ∆TJ Temperature Coefficient RDS(on) Static Drain–Source VGS = 10 V, ID = 18 A 3.0 4.0 mΩ On–Resistance VGS = 4.5 V, ID = 17 A 3.8 5.0 VGS = 10 V, ID = 18 A, TJ = 125°C 4.3 6.3 ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 30 A gFS Forward Transconductance VDS = 10 V, ID = 18 A 112 S
Dynamic Characteristics
Ciss Input Capacitance 3845 pF VDS = 15 V, V GS = 0 V, Coss Output Capacitance f = 1.0 MHz 930 pF Crss Reverse Transfer Capacitance 368 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.4 Ω
Switching Characteristics (Note 2)
t V d(on) Turn–On Delay Time DD = 15 V, ID = 1 A, 15 27 ns V t GS = 10 V, RGEN = 6 Ω r Turn–On Rise Time 13 23 ns td(off) Turn–Off Delay Time 62 99 ns tf Turn–Off Fall Time 36 58 ns Q V g Total Gate Charge DS = 15 V, ID = 18 A, 37 48 nC V Q GS = 5.0 V gs Gate–Source Charge 10 nC Qgd Gate–Drain Charge 14 nC
Drain–Source Diode Characteristics and Maximum Ratings
Drain–Source Diode Forward VSD V Voltage GS = 0 V, IS = 2.1 A (Note 2) 0.7 1.2 V trr Diode Reverse Recovery Time IF = 18 A, 39 nS Q diF/dt = 100 A/µs rr Diode Reverse Recovery Charge 33 nC
Notes: 1.
Rθ is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of JA the drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θCA a) 50°C/W when b) 105°C/W when c) 125°C/W when mounted on a mounted on a 1in2 mounted on a .04 in2 minimum pad. pad of 2 oz copper pad of 2 oz copper Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS7788 Rev F(W)
