Datasheet BSN254, BSN254A (NXP) - 3
| Manufacturer | NXP |
| Description | N-channel enhancement mode vertical D-MOS transistor |
| Pages / Page | 12 / 3 — THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. VALUE. UNIT. Note. … |
| File Format / Size | PDF / 75 Kb |
| Document Language | English |
THERMAL CHARACTERISTICS. SYMBOL. PARAMETER. VALUE. UNIT. Note. CHARACTERISTICS. CONDITIONS. MIN. TYP. MAX. UNIT. Switching times
Text Version of Document
Philips Semiconductors Product specification N-channel enhancement mode BSN254; BSN254A vertical D-MOS transistor
THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT
Rth j-a thermal resistance from junction to ambient; note 1 125 K/W
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum 10 × 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 250 − − V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − ±100 nA VGSth gate-source threshold voltage ID = 1 mA; VDS = VGS 0.8 − 2 V RDSon drain-source on-state resistance ID = 20 mA; VGS = 2.4 V − − 7.5 Ω ID = 300 mA; VGS = 10 V − 2.8 5 Ω IDSS drain-source leakage current VDS = 200 V; VGS = 0 − − 1 µA Yfs transfer admittance ID = 300 mA; VDS = 25 V 200 600 − mS Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 100 120 pF Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 21 30 pF Crss feedback capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 10 15 pF
Switching times
(see Figs 2 and 3) ton turn-on time ID = 250 mA; VDD = 50 V; − 6 10 ns VGS = 0 to 10 V toff turn-off time ID = 250 mA; VDD = 50 V; − 47 60 ns VGS = 10 to 0 V 2002 Feb 19 3 Document Outline FEATURES APPLICATIONS DESCRIPTION QUICK REFERENCE DATA PINNING LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT54 variant DATA SHEET STATUS DEFINITIONS DISCLAIMERS
THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT
Rth j-a thermal resistance from junction to ambient; note 1 125 K/W
Note
1. Device mounted on a printed-circuit board; maximum lead length 4 mm; mounting pad for drain lead minimum 10 × 10 mm.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage ID = 10 µA; VGS = 0 250 − − V IGSS gate-source leakage current VGS = ±20 V; VDS = 0 − − ±100 nA VGSth gate-source threshold voltage ID = 1 mA; VDS = VGS 0.8 − 2 V RDSon drain-source on-state resistance ID = 20 mA; VGS = 2.4 V − − 7.5 Ω ID = 300 mA; VGS = 10 V − 2.8 5 Ω IDSS drain-source leakage current VDS = 200 V; VGS = 0 − − 1 µA Yfs transfer admittance ID = 300 mA; VDS = 25 V 200 600 − mS Ciss input capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 100 120 pF Coss output capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 21 30 pF Crss feedback capacitance VDS = 25 V; VGS = 0; f = 1 MHz − 10 15 pF
Switching times
(see Figs 2 and 3) ton turn-on time ID = 250 mA; VDD = 50 V; − 6 10 ns VGS = 0 to 10 V toff turn-off time ID = 250 mA; VDD = 50 V; − 47 60 ns VGS = 10 to 0 V 2002 Feb 19 3 Document Outline FEATURES APPLICATIONS DESCRIPTION QUICK REFERENCE DATA PINNING LIMITING VALUES THERMAL CHARACTERISTICS CHARACTERISTICS PACKAGE OUTLINE SOT54 variant DATA SHEET STATUS DEFINITIONS DISCLAIMERS