Datasheet CBRLDSH1-40 (Central Semiconductor)
| Manufacturer | Central Semiconductor |
| Description | SURFACE MOUNT LOW PROFILE 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER |
| Pages / Page | 3 / 1 — CBRLDSH1-40. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. LOW … |
| File Format / Size | PDF / 602 Kb |
| Document Language | English |
CBRLDSH1-40. SURFACE MOUNT. w w w. c e n t r a l s e m i . c o m. LOW PROFILE. DESCRIPTION:. 1 AMP SILICON
Model Line for this Datasheet
Text Version of Document
CBRLDSH1-40 SURFACE MOUNT w w w. c e n t r a l s e m i . c o m LOW PROFILE DESCRIPTION: 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER
The CENTRAL SEMICONDUCTOR CBRLDSH1-40 is a full wave Schottky bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CLP1 LPDIP CASE APPLICATIONS: FEATURES: •
Solid state lighting (SSL)
•
Low leakage current (16μA TYP @ VRRM)
•
DC-DC converters
•
Low profile case (1.45mm MAX)
•
Polarity protection
•
Low VF Schottky diodes (450mV TYP @ IF=1.0A)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V DC Blocking Voltage VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Forward Current IO 1.0 A Peak Forward Surge Current (tp=8.3ms) IFSM 30 A Operating & Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=40V 16 100 μA BVR IR=0.1mA 40 50 V VF IF=1.0A 450 500 mV CJ VR=4.0V, f=1.0MHz 110 pF R1 (17-January 2012)
The CENTRAL SEMICONDUCTOR CBRLDSH1-40 is a full wave Schottky bridge rectifier mounted in a low profile epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CLP1 LPDIP CASE APPLICATIONS: FEATURES: •
Solid state lighting (SSL)
•
Low leakage current (16μA TYP @ VRRM)
•
DC-DC converters
•
Low profile case (1.45mm MAX)
•
Polarity protection
•
Low VF Schottky diodes (450mV TYP @ IF=1.0A)
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL UNITS
Peak Repetitive Reverse Voltage VRRM 40 V DC Blocking Voltage VR 40 V RMS Reverse Voltage VR(RMS) 28 V Average Forward Current IO 1.0 A Peak Forward Surge Current (tp=8.3ms) IFSM 30 A Operating & Storage Junction Temperature TJ, Tstg -55 to +150 °C Thermal Resistance ΘJA 95 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IR VR=40V 16 100 μA BVR IR=0.1mA 40 50 V VF IF=1.0A 450 500 mV CJ VR=4.0V, f=1.0MHz 110 pF R1 (17-January 2012)
