Datasheet FDV303N (ON Semiconductor) - 2

ManufacturerON Semiconductor
DescriptionDigital FET, N-Channel
Pages / Page7 / 2 — FDV303N. MOSFET MAXIMUM RATINGS. Symbol. Parameter. Units. THERMAL …
Revision5
File Format / SizePDF / 270 Kb
Document LanguageEnglish

FDV303N. MOSFET MAXIMUM RATINGS. Symbol. Parameter. Units. THERMAL CHARACTERISTICS. Ratings. ORDERING INFORMATION. Device. Package

FDV303N MOSFET MAXIMUM RATINGS Symbol Parameter Units THERMAL CHARACTERISTICS Ratings ORDERING INFORMATION Device Package

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FDV303N MOSFET MAXIMUM RATINGS
TA = 25°C unless otherwise noted
Symbol Parameter FDV303N Units
VDSS Drain−Source Voltage, Power Supply Voltage 25 V VGSS Gate−Source Voltage, VIN 8 V ID Drain/Output Current A − Continuous 0.68 − Pulsed 2 PD Maximum Power Dissipation 0.35 W TJ, TSTG Operating and Storage Temperature Range −55 to 150 °C ESD Electrostatic Discharge Rating MIL−STD−883D Human Body Model 6.0 kV (100 pf / 1500 W)
THERMAL CHARACTERISTICS Symbol Parameter Ratings Units
RθJA Thermal Resistance, Junction−to−Ambient 357 °C/W
ORDERING INFORMATION Device Package Shipping†
FDV303N SOT−23 3000 / Tape & Reel Case 318−08 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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