August 1997 FDV303N Digital FET, N-ChannelGeneral DescriptionFeatures 25 V, 0.68 A continuous, 2 A Peak. These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS R = 0.45 Ω @ V = 4.5 V DS(ON) GS technology. This very high density process is tailored to minimize R = 0.6 Ω @ V = 2.7 V. DS(ON) GS on-state resistance at low gate drive conditions. This device is Very low level gate drive requirements allowing direct designed especially for application in battery circuits using either operation in 3V circuits. V < 1.5V. one lithium or three cadmium or NMH cells. It can be used as an
GS(th) inverter or for high-efficiency miniature discrete DC/DC Gate-Source Zener for ESD ruggedness. conversion in compact portable electronic devices like cellular >6kV Human Body Model phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T. SOT-23SuperSOTTM-6SuperSOTTM-8SO-8SOT-223SOIC-16Mark:303 D G S Absolute Maximum Ratings T = 25oC unless other wise noted