Datasheet RFD10P03L, RFD10P03LSM, RFP10P03L (Intersil) - 5
| Manufacturer | Intersil |
| Description | 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET |
| Pages / Page | 8 / 5 — RFD10P03L, RFD10P03LSM, RFP10P03L. Typical Performance Curves. … |
| File Format / Size | PDF / 145 Kb |
| Document Language | English |
RFD10P03L, RFD10P03LSM, RFP10P03L. Typical Performance Curves. (Continued). 1.2. 150. GS = VDS, ID = -250
Model Line for this Datasheet
Text Version of Document
RFD10P03L, RFD10P03LSM, RFP10P03L Typical Performance Curves
Unless Otherwise Specified
(Continued) 1.2 150 V V GS = VDS, ID = -250
µ
A DD = -15V, ID = -10A, RL= 1.50
Ω
125 1.0 tr TE GE A T 100 L O td(OFF) 0.8 75 tf 50 SWITCHING TIME (ns) NORMALIZED GA THRESHOLD V 0.6 td(ON) 25 0.4 0 -80 -40 0 40 80 120 160 200 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (oC) RGS, GATE TO SOURCE RESISTANCE (
Ω
) FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 13. SWITCHING TIME vs GATE RESISTANCE JUNCTION TEMPERATURE -30 -5.00 1200 CISS V V DD =BVDSS DD = BVDSS GE (V) GE (V) 1000 A T A V L -22.5 -3.75 T GS = 0V, f = 0.1MHz L O O C 800 ISS = CGS + CGD CRSS = CGD RL = 3.0
Ω
COSS
≈
CDS + CGD ANCE (pF) -15 I -2.50 G(REF) = -0.25mA 600 SOURCE V 0.75 BV CIT DSS 0.75 BVDSS SOURCE V A O O COSS 0.50 BVDSS 0.50 BVDSS 400 , CAP -7.5 0.25 BV TE T DSS 0.25 BVDSS -1.25 A C DRAIN T G , , V 200 GS = -5V DS GS V V CRSS 0 0.00 I 0 G(REF) IG(REF) 20 t, TIME (
µ
s) 80 0 -5 -10 -15 -20 -25 IG(ACT) IG(ACT) VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE CONSTANT GATE CURRENT Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN - REQUIRED PEAK I R AS G VDD + 0V DUT VDD tP I V AS GS V I DS AS tP 0.01
Ω
BVDSS FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
7-7
Unless Otherwise Specified
(Continued) 1.2 150 V V GS = VDS, ID = -250
µ
A DD = -15V, ID = -10A, RL= 1.50
Ω
125 1.0 tr TE GE A T 100 L O td(OFF) 0.8 75 tf 50 SWITCHING TIME (ns) NORMALIZED GA THRESHOLD V 0.6 td(ON) 25 0.4 0 -80 -40 0 40 80 120 160 200 0 10 20 30 40 50 TJ, JUNCTION TEMPERATURE (oC) RGS, GATE TO SOURCE RESISTANCE (
Ω
) FIGURE 12. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 13. SWITCHING TIME vs GATE RESISTANCE JUNCTION TEMPERATURE -30 -5.00 1200 CISS V V DD =BVDSS DD = BVDSS GE (V) GE (V) 1000 A T A V L -22.5 -3.75 T GS = 0V, f = 0.1MHz L O O C 800 ISS = CGS + CGD CRSS = CGD RL = 3.0
Ω
COSS
≈
CDS + CGD ANCE (pF) -15 I -2.50 G(REF) = -0.25mA 600 SOURCE V 0.75 BV CIT DSS 0.75 BVDSS SOURCE V A O O COSS 0.50 BVDSS 0.50 BVDSS 400 , CAP -7.5 0.25 BV TE T DSS 0.25 BVDSS -1.25 A C DRAIN T G , , V 200 GS = -5V DS GS V V CRSS 0 0.00 I 0 G(REF) IG(REF) 20 t, TIME (
µ
s) 80 0 -5 -10 -15 -20 -25 IG(ACT) IG(ACT) VDS, DRAIN TO SOURCE VOLTAGE (V)
NOTE: Refer to Intersil Application Notes AN7254 and AN7260.
FIGURE 14. NORMALIZED SWITCHING WAVEFORMS FOR FIGURE 15. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE CONSTANT GATE CURRENT Test Circuits and Waveforms VDS tAV L 0 VARY tP TO OBTAIN - REQUIRED PEAK I R AS G VDD + 0V DUT VDD tP I V AS GS V I DS AS tP 0.01
Ω
BVDSS FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS
7-7
