Datasheet BAS16 (Vishay)
| Manufacturer | Vishay |
| Description | Small Signal Fast Switching Diode |
| Pages / Page | 4 / 1 — BAS16. Small Signal Fast Switching Diode. FEATURES. DESIGN SUPPORT TOOLS. … |
| File Format / Size | PDF / 87 Kb |
| Document Language | English |
BAS16. Small Signal Fast Switching Diode. FEATURES. DESIGN SUPPORT TOOLS. MECHANICAL DATA Case:. Weight:
Model Line for this Datasheet
Text Version of Document
BAS16
www.vishay.com Vishay Semiconductors
Small Signal Fast Switching Diode FEATURES
• Silicon epitaxial planar diode 3 • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance 1 2 • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
DESIGN SUPPORT TOOLS
• Material categorization: for definitions of compliance click logo to get started please see www.vishay.com/doc?99912 Models Available
MECHANICAL DATA Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAS16-E3-08 or BAS16-E3-18 BAS16 Single A6 Tape and reel BAS16-HE3-08 or BAS16-HE3-18
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Non repetitive peak reverse voltage VRM 100 V Repetitive peak reverse voltage = working peak reverse voltage VRRM = VRWM = VR 75 V = DC blocking voltage tp = 1 s IFSM 1 A Peak forward surge current tp = 1 μs IFSM 2 A Half wave rectification with resistive load and Average forward current f ≥ 50 MHz, on ceramic substrate IF(AV) 150 mA 8 mm x 10 mm x 0.7 mm On ceramic substrate Forward current I 8 mm x 10 mm x 0.7 mm F 300 mA On ceramic substrate Power dissipation P 8 mm x 10 mm x 0.7 mm tot 350 mW
THERMAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
On ceramic substrate Junction ambient R 8 mm x 10 mm x 0.7 mm thJA 357 K/W Junction and storage temperature range Tj = Tstg -55 to +150 °C Operating temperature range Top -55 to +150 °C Rev. 1.9, 11-Jul-17
1
Document Number: 85539 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Semiconductors
Small Signal Fast Switching Diode FEATURES
• Silicon epitaxial planar diode 3 • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance 1 2 • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
DESIGN SUPPORT TOOLS
• Material categorization: for definitions of compliance click logo to get started please see www.vishay.com/doc?99912 Models Available
MECHANICAL DATA Case:
SOT-23
Weight:
approx. 8.8 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS
BAS16-E3-08 or BAS16-E3-18 BAS16 Single A6 Tape and reel BAS16-HE3-08 or BAS16-HE3-18
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Non repetitive peak reverse voltage VRM 100 V Repetitive peak reverse voltage = working peak reverse voltage VRRM = VRWM = VR 75 V = DC blocking voltage tp = 1 s IFSM 1 A Peak forward surge current tp = 1 μs IFSM 2 A Half wave rectification with resistive load and Average forward current f ≥ 50 MHz, on ceramic substrate IF(AV) 150 mA 8 mm x 10 mm x 0.7 mm On ceramic substrate Forward current I 8 mm x 10 mm x 0.7 mm F 300 mA On ceramic substrate Power dissipation P 8 mm x 10 mm x 0.7 mm tot 350 mW
THERMAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
On ceramic substrate Junction ambient R 8 mm x 10 mm x 0.7 mm thJA 357 K/W Junction and storage temperature range Tj = Tstg -55 to +150 °C Operating temperature range Top -55 to +150 °C Rev. 1.9, 11-Jul-17
1
Document Number: 85539 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
