Datasheet FDN340P (ON Semiconductor) - 3

FDN340P TYPICAL CHARACTERISTICS
15 2 −4.5 V −2.5 V VGS = −2.0 V −3.5 V 12 1.8 −3.0 V −2.5 V 1.6 9
−Resistance
−2.0 V 1.4
Normalized
− 3 V 6
(ON) Drain Current (A)
1.2 − 3.5 V
DS −I D, R −Source On
3 − 4.5 V VGS = −1.5 V 1
Drain
0 0.8 0 1 2 3 4 0 3 6 9 12 15
−V −I DS, Drain to Source Voltage (V) D, Drain Current (A) Figure 1. On−Region Characteristics Figure 2. On−Resistance Variation with Drain Current and Gate Voltage
1.4 0.22
W)
I 1.3 D = −2 A ID = −1 A VGS = −4.5 V
W)
0.18 1.2 0.14 1.1
−Resistance (
T
, Normalized
A = 125°C 1
−Resistance (
0.1
(ON) On DS
0.9 T
R
A = 25°C
−Source On (ON)
0.06
DS
0.8
R Drain
0.7 0.02 −50 −25 0 25 50 75 100 125 150 1 2 3 4 5
TJ, Junction temperature (
5
C) −VGS, Gate to Source Voltage (V) Figure 3. On−Resistance Variation with Figure 4. On−Resistance Variation with Temperature Gate−to−Source Voltage
10 10 TA = −55°C VGS = 0 V VDS = −5 V 25°C 8 1 125°C T 6 A = 125°C 0.1 25°C 4 0.01
, Drain Current (A) I D
−55°C 2
, Reserve Drain Current (A)
0.001
−I S
0 0.0001 0.5 1 1.5 2 2.5 0 0.2 0.4 0.6 0.8 1 1.2
−VGS, Gate to Source Voltage (V) −VSD, Body Diode Forward Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.onsemi.com 3