Datasheet BSS308PE (Infineon) - 6
| Manufacturer | Infineon |
| Description | OptiMOS P3 Small-Signal-Transistor |
| Pages / Page | 9 / 6 — BSS308PE. 9 Drain-source on-state resistance. 10 Typ. gate threshold … |
| Revision | 02_03 |
| File Format / Size | PDF / 246 Kb |
| Document Language | English |
BSS308PE. 9 Drain-source on-state resistance. 10 Typ. gate threshold voltage. 140. 2.4. 120. 100. 1.6. [V]. (th). 1.2. (on). 0.8. 0.4. -60. -20. 180
Model Line for this Datasheet
Text Version of Document
BSS308PE 9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=-2 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=11 µA parameter: I D
140 2.4 120 2
98 %
100 1.6
98 %
]
Ω typ
80 [m [V] (th) 1.2 (on) S
typ
G DS
2 %
60 R V 0.8 40 0.4 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j
103 101
Ciss 150 °C Coss
100
25 °C
102
150 °C, 98%
[pF]
[A]
10-1 C
Crss I F 25 °C, 98%
101 10-2 100 10-3 0 5 10 15 20
0 0.4 0.8 1.2 1.6
V DS [V] V SD [V]
Rev 2.03 page 6 2011-07-08
R DS(on)=f(T j); I D=-2 A; V GS=-10 V V GS(th)=f(T j); V DS=VGS; I D=11 µA parameter: I D
140 2.4 120 2
98 %
100 1.6
98 %
]
Ω typ
80 [m [V] (th) 1.2 (on) S
typ
G DS
2 %
60 R V 0.8 40 0.4 20 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C I F=f(V SD) parameter: T j
103 101
Ciss 150 °C Coss
100
25 °C
102
150 °C, 98%
[pF]
[A]
10-1 C
Crss I F 25 °C, 98%
101 10-2 100 10-3 0 5 10 15 20
0 0.4 0.8 1.2 1.6
V DS [V] V SD [V]
Rev 2.03 page 6 2011-07-08
