Datasheet TLVH431B-EP (Texas Instruments) - 4

ManufacturerTexas Instruments
DescriptionEnhanced-plastic 0.5% low-voltage wide-operating-current adjustable precision shunt regulator
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TLVH431B-EP. www.ti.com. 6 Specifications. 6.1 Absolute Maximum Ratings. MIN. MAX. UNIT. 6.2 ESD Ratings. VALUE

TLVH431B-EP www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings MIN MAX UNIT 6.2 ESD Ratings VALUE

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TLVH431B-EP
SLVSFF4 – DECEMBER 2019
www.ti.com 6 Specifications 6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
MIN MAX UNIT
VKA Cathode voltage(2) 20 V IK Cathode current –25 80 mA Iref Reference current –0.05 3 mA TJ Operating virtual junction temperature 150 °C Tstg Storage temperature –65 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) Voltage values are with respect to the anode terminal, unless otherwise noted.
6.2 ESD Ratings VALUE UNIT
Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V(ESD) Electrostatic discharge V Charged device model (CDM), per JEDEC specification JESD22-C101(2) ±1000 (1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
See(1)
MIN MAX UNIT
VKA Cathode voltage VREF 18 V IK Cathode current (continuous) 0.2 70 mA TA Operating free-air temperature –55 125 °C (1) Maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any allowable ambient temperature is PD = (TJ(max) – TA) / θJA. Operating at the absolute maximum TJ of 150°C can affect reliability.
6.4 Thermal Information TLVH431B-EP THERMAL METRIC(1) DBZ (SOT-23) UNIT 3 PINS
RθJA Junction-to-ambient thermal resistance 226.5 °C/W RθJC(top) Junction-to-case (top) thermal resistance 91.5 °C/W RθJB Junction-to-board thermal resistance 45.0 °C/W ψJT Junction-to-top characterization parameter 3.0 °C/W ψJB Junction-to-board characterization parameter 44.7 °C/W (1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report. 4 Submit Documentation Feedback Copyright © 2019, Texas Instruments Incorporated Product Folder Links: TLVH431B-EP Document Outline 1 Features 2 Applications 3 Description Table of Contents 4 Revision History 5 Pin Configuration and Functions 6 Specifications 6.1 Absolute Maximum Ratings 6.2 ESD Ratings 6.3 Recommended Operating Conditions 6.4 Thermal Information 6.5 Electrical Characteristics 6.6 Typical Characteristics 7 Parameter Measurement Information 8 Detailed Description 8.1 Overview 8.2 Functional Block Diagram 8.3 Feature Description 8.4 Device Functional Modes 8.4.1 Open Loop (Comparator) 8.4.2 Closed Loop 9 Applications and Implementation 9.1 Application Information 9.2 Typical Applications 9.2.1 Comparator With Integrated Reference (Open Loop) 9.2.1.1 Design Requirements 9.2.1.2 Detailed Design Procedure 9.2.1.3 Application Curves 9.2.2 Shunt Regulator/Reference 9.2.2.1 Design Requirements 9.2.2.2 Detailed Design Procedure 9.2.2.3 Application Curve 10 Power Supply Recommendations 11 Layout 11.1 Layout Guidelines 11.2 Layout Example 12 Device and Documentation Support 12.1 Documentation Support 12.1.1 Related Documentation 12.2 Receiving Notification of Documentation Updates 12.3 Support Resources 12.4 Trademarks 12.5 Electrostatic Discharge Caution 12.6 Glossary 13 Mechanical, Packaging, and Orderable Information