Datasheet CM2400HCB-34N (Mitsubishi Electric) - 6
| Manufacturer | Mitsubishi Electric |
| Description | 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules |
| Pages / Page | 7 / 6 — MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. … |
| File Format / Size | PDF / 97 Kb |
| Document Language | English |
MITSUBISHI HVIGBT MODULES. CM2400HCB-34N. HIGH POWER SWITCHING USE. INSULATED TYPE. HALF-BRIDGE SWITCHING TIME
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MITSUBISHI HVIGBT MODULES CM2400HCB-34N HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE HALF-BRIDGE SWITCHING TIME FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS CHARACTERISTICS (TYPICAL) (TYPICAL)
101 102 104 7 VCC = 900V, VGE = ±15V 7 VCC = 900V, VGE = ±15V 7 5 RG (on) = 0.8Ω, RG (off) = 1.1Ω 5 RG (on) = 0.8Ω, Tj = 125°C 5 Tj = 125°C, Inductive load Inductive load ) 3 ) 3 3 ( A td(off) 2 ( µs 2 2 ) lrr ( µs 100 td(on) 101 103 7 7 7 5 tf 5 5 3 3 3 2 2 2 trr 10-1 100 102 SWITCHING TIMES 7 7 7 5 tr 5 5 REVERSE RECOVERY TIME 3 3 3 REVERSE RECOVERY CURRENT 2 2 2 101 10-2 10-1 2 3 4 5 7 2 3 5 7 104 103 102 2 3 4 5 7 2 3 4 5 7 104 103 102 4 COLLECTOR CURRENT (A) EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
1.2 Rth(j–c)Q = 8.0K/kW Rth(j–c)R = 12.0K/kW 1.0 0.8 0.6 0.4 0.2 NORMALIZED TRANSIENT THERMAL IMPEDANCE 0 10-2 10-3 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 6
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE HALF-BRIDGE SWITCHING TIME FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS CHARACTERISTICS (TYPICAL) (TYPICAL)
101 102 104 7 VCC = 900V, VGE = ±15V 7 VCC = 900V, VGE = ±15V 7 5 RG (on) = 0.8Ω, RG (off) = 1.1Ω 5 RG (on) = 0.8Ω, Tj = 125°C 5 Tj = 125°C, Inductive load Inductive load ) 3 ) 3 3 ( A td(off) 2 ( µs 2 2 ) lrr ( µs 100 td(on) 101 103 7 7 7 5 tf 5 5 3 3 3 2 2 2 trr 10-1 100 102 SWITCHING TIMES 7 7 7 5 tr 5 5 REVERSE RECOVERY TIME 3 3 3 REVERSE RECOVERY CURRENT 2 2 2 101 10-2 10-1 2 3 4 5 7 2 3 5 7 104 103 102 2 3 4 5 7 2 3 4 5 7 104 103 102 4 COLLECTOR CURRENT (A) EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
1.2 Rth(j–c)Q = 8.0K/kW Rth(j–c)R = 12.0K/kW 1.0 0.8 0.6 0.4 0.2 NORMALIZED TRANSIENT THERMAL IMPEDANCE 0 10-2 10-3 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Sep. 2009 6
