Datasheet AOTF10B65M2 (Alpha & Omega)
| Manufacturer | Alpha & Omega |
| Description | 650V, 10A Alpha IGBT With Soft And Fast Recovery Anti-Parallel Diode |
| Pages / Page | 9 / 1 — AOTF10B65M2. 650V, 10A AlphaIGBT TM. With soft and fast recovery … |
| File Format / Size | PDF / 1.2 Mb |
| Document Language | English |
AOTF10B65M2. 650V, 10A AlphaIGBT TM. With soft and fast recovery anti-parallel diode. General Description. Product Summary
Model Line for this Datasheet
Text Version of Document
AOTF10B65M2 650V, 10A AlphaIGBT TM With soft and fast recovery anti-parallel diode General Description Product Summary
• Latest AlphaIGBT(αIGBT) technology VCE 650V • 650V breakdown voltage IC (TC=100°C) 10A • Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25°C) 1.6V • High efficient turn-on di/dt control ability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness
Applications
• Motor drives • Sewing machines • Servo and general purpose inverters • Fan, pumps, vacuum cleaner • Other hard switching applications
TO-220F
C E C G G E
AOTF10B65M2 Orderable Part Number Package Type Form Minimum Order Quantity
AOTF10B65M2 TO220F Tube 1000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOTF10B65M2 Units
Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C 202) I C A Current TC=100°C 102) Pulsed Collector Current, Limited by TJmax I CM 30 A Turn off SOA, V ≤ CE 650V, Limited by TJmax I LM 30 A Continuous Diode TC=25°C 202) I F A Forward Current TC=100°C 102) Diode Pulsed Current, Limited by TJmax I FM 30 A Short circuit withstanding time 1) t SC 5 ms V ≤ ≤ GE=15V, VCC 400V, TJ 150°C TC=25°C 30 Power Dissipation P D W TC=100°C 12 Junction and Storage Temperature Range T J , T STG -55 to 150 °C Maximum lead temperature for soldering T L 300 °C purpose, 1/8" from case for 5 seconds
Thermal Characteristics Parameter Symbol AOTF10B65M2 Units
Maximum Junction-to-Ambient R q JA 65 °C/W Maximum IGBT Junction-to-Case R q JC 4.2 °C/W Maximum Diode Junction-to-Case R q JC 5 °C/W 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) TO220F IC follows TO220/TO263. Rev.2.0: February 2021
www.aosmd.com
Page 1 of 9
• Latest AlphaIGBT(αIGBT) technology VCE 650V • 650V breakdown voltage IC (TC=100°C) 10A • Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25°C) 1.6V • High efficient turn-on di/dt control ability • Low VCE(sat) enables high efficiencies • Low turn-off switching loss and softness • Very good EMI behavior • High short-circuit ruggedness
Applications
• Motor drives • Sewing machines • Servo and general purpose inverters • Fan, pumps, vacuum cleaner • Other hard switching applications
TO-220F
C E C G G E
AOTF10B65M2 Orderable Part Number Package Type Form Minimum Order Quantity
AOTF10B65M2 TO220F Tube 1000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOTF10B65M2 Units
Collector-Emitter Voltage V CE 650 V Gate-Emitter Voltage V GE ±30 V Continuous Collector TC=25°C 202) I C A Current TC=100°C 102) Pulsed Collector Current, Limited by TJmax I CM 30 A Turn off SOA, V ≤ CE 650V, Limited by TJmax I LM 30 A Continuous Diode TC=25°C 202) I F A Forward Current TC=100°C 102) Diode Pulsed Current, Limited by TJmax I FM 30 A Short circuit withstanding time 1) t SC 5 ms V ≤ ≤ GE=15V, VCC 400V, TJ 150°C TC=25°C 30 Power Dissipation P D W TC=100°C 12 Junction and Storage Temperature Range T J , T STG -55 to 150 °C Maximum lead temperature for soldering T L 300 °C purpose, 1/8" from case for 5 seconds
Thermal Characteristics Parameter Symbol AOTF10B65M2 Units
Maximum Junction-to-Ambient R q JA 65 °C/W Maximum IGBT Junction-to-Case R q JC 4.2 °C/W Maximum Diode Junction-to-Case R q JC 5 °C/W 1) Allowed number of short circuits: <1000; time between short circuits: >1s. 2) TO220F IC follows TO220/TO263. Rev.2.0: February 2021
www.aosmd.com
Page 1 of 9
