Datasheet AP2337 (Diodes) - 3
| Manufacturer | Diodes |
| Description | 1.0A Single Channel Current-Limited Load Switch |
| Pages / Page | 10 / 3 — AP2337. 1.0A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH. Recommended … |
| File Format / Size | PDF / 289 Kb |
| Document Language | English |
AP2337. 1.0A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH. Recommended Operating Conditions. Symbol. Parameter. Min. Max. Units
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AP2337 1.0A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH Recommended Operating Conditions Symbol Parameter Min Max Units
VIN Input voltage 2.7 5.5 V IOUT Output Current 0 1.0 A TA Operating Ambient Temperature -40 85 °C
Electrical Characteristics (T A = 25oC, VIN = +5.0V, unless otherwise stated) T Symbol Parameter Test Conditions (Note 3) Min Typ. Max Unit UC
VUVLO Input UVLO VIN rising 2.00 2.65 V IQ Input quiescent current Above UVLO, IOUT= 0 65 110 μA IREV Reverse leakage current VIN = 0V, VOUT = 5V, IREV at VIN 0.01 0.1 μA RDS(ON) Switch on-resistance VIN = 5V, IOUT = 1A 110 140 mΩ VIN = 3.3V, IOUT = 1A 140 170 I
NEW PROD
LIMIT Over-load current limit VIN = 5V, VOUT = 4V, CL=10μF 1.1 1.5 1.9 A IOS Short-circuit current OUT connected to ground, CL=10μF 0.2 0.6 1.0 A From V T OUT < 0.6V to IOUT = 0A (OUT shorted to SHORT Short-circuit response time 5 μs GND) (See Figure. 1)(Note 7) IROCP Reverse current limit Above UVLO 0.3 0.5 0.7 A Deglitch time from reverse current TTrig 0.6 ms trigger to MOSFET turn off VOVP Output over-voltage trip point Above UVLO (Note 4) 110% 120% VIN Debounce time from output over- TOVP 15 μs voltage to MOSFET turn off TON Output turn-on time (Note 5) CL = 1μF, Rload = 5Ω (UVLO to 90% VOUT-NOM) 1 4 ms TDIS Discharge time CL= 1μF, from UVLO to VOUT < 0.3V 500 μs TSHDN Thermal shutdown threshold 150 °C THYS Thermal shutdown hysteresis 20 °C θ Thermal Resistance Junction-to- JA (Note 6) 180 oC/W Ambient Notes: 3. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 4. During output over-voltage protection, the output draws approximately 60µA current. 5. Since the output turn-on slew rate is dependent on input supply slew rate, this limit is only applicable for input supply slew rate between 5V/0.2ms to 5V/1ms. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 7. Applicable for output voltage slew rate ≤ 5V/30μs.
Figure 1. Short Circuit Response Time
AP2337 3 of 10 October 2011 Document number: DS35060 Rev. 2 - 2
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© Diodes Incorporated
VIN Input voltage 2.7 5.5 V IOUT Output Current 0 1.0 A TA Operating Ambient Temperature -40 85 °C
Electrical Characteristics (T A = 25oC, VIN = +5.0V, unless otherwise stated) T Symbol Parameter Test Conditions (Note 3) Min Typ. Max Unit UC
VUVLO Input UVLO VIN rising 2.00 2.65 V IQ Input quiescent current Above UVLO, IOUT= 0 65 110 μA IREV Reverse leakage current VIN = 0V, VOUT = 5V, IREV at VIN 0.01 0.1 μA RDS(ON) Switch on-resistance VIN = 5V, IOUT = 1A 110 140 mΩ VIN = 3.3V, IOUT = 1A 140 170 I
NEW PROD
LIMIT Over-load current limit VIN = 5V, VOUT = 4V, CL=10μF 1.1 1.5 1.9 A IOS Short-circuit current OUT connected to ground, CL=10μF 0.2 0.6 1.0 A From V T OUT < 0.6V to IOUT = 0A (OUT shorted to SHORT Short-circuit response time 5 μs GND) (See Figure. 1)(Note 7) IROCP Reverse current limit Above UVLO 0.3 0.5 0.7 A Deglitch time from reverse current TTrig 0.6 ms trigger to MOSFET turn off VOVP Output over-voltage trip point Above UVLO (Note 4) 110% 120% VIN Debounce time from output over- TOVP 15 μs voltage to MOSFET turn off TON Output turn-on time (Note 5) CL = 1μF, Rload = 5Ω (UVLO to 90% VOUT-NOM) 1 4 ms TDIS Discharge time CL= 1μF, from UVLO to VOUT < 0.3V 500 μs TSHDN Thermal shutdown threshold 150 °C THYS Thermal shutdown hysteresis 20 °C θ Thermal Resistance Junction-to- JA (Note 6) 180 oC/W Ambient Notes: 3. Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. 4. During output over-voltage protection, the output draws approximately 60µA current. 5. Since the output turn-on slew rate is dependent on input supply slew rate, this limit is only applicable for input supply slew rate between 5V/0.2ms to 5V/1ms. 6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 7. Applicable for output voltage slew rate ≤ 5V/30μs.
Figure 1. Short Circuit Response Time
AP2337 3 of 10 October 2011 Document number: DS35060 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated
