Datasheet IXGH32N170A (Littelfuse)

IXGH 32N170A High Voltage V = 1700 V
CES
IXGT 32N170A I = 32 A
C25 IGBT
V = 5.0 V
CE(sat)
t = 50 ns
fi(typ)
Symbol Test Conditions Maximum Ratings TO-268 (IXGT) V
T = 25°C to 150°C 1700 V
CES
J
V
T = 25°C to 150°C; R = 1 MΩ 1700 V
CGR
J GE G
V
Continuous ±20 V
GES
E C (TAB)
V
Transient ±30 V
GEM I
T = 25°C 32 A
C25
C
TO-247 AD (IXGH) I
T = 90°C 21 A
C90
C
I
T = 25°C, 1 ms 110 A
CM
C
SSOA
V = 15 V, T = 125°C, R = 5Ω I = 70 A GE VJ G CM C (TAB)
(RBSOA)
Clamped inductive load @ 0.8 V G CES C E
t
T = 125°C, V = 1200 V; V = 15 V, R = 10Ω 10 µs
SC
J CE GE G G = Gate, C = Collector, E = Emitter, TAB = Collector
P
T = 25°C 350 W
C
C
T
-55 ... +150 °C
J Features T
150 °C
JM
z International standard packages
T
-55 ... +150 °C
stg
JEDEC TO-268 and JEDEC TO-247 AD
M
Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in.
d
z High current handling capability z MOS Gate turn-on Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s - drive simplicity z Rugged NPT structure
Weight
TO-247 6 g z Molding epoxies meet UL 94 V-0 TO-268 4 g flammability classification
Applications
z Capacitor discharge & pulser circuits z
Symbol Test Conditions Characteristic Values
AC motor speed control z (T = 25°C, unless otherwise specified) DC servo and robot drives J z
min. typ. max.
DC choppers z Uninterruptible power supplies (UPS)
BV
I = 250 µA, V = 0 V 1700 V z
CES
C GE Switched-mode and resonant-mode
V
I = 250 µA, V = V 3.0 5.0 V
GE(th)
C CE GE power supplies
I
V = 0.8 • V T = 25°C 50 µA
CES
CE CES J V = 0 V Note 1 T = 125°C 2 mA GE J
Advantages
z High power density
I
V = 0 V, V = ±20 V ±100 nA
GES
CE GE z Suitable for surface mounting z
V
I = I , V = 15 V T = 25°C 4.0 5.0 V
CE(sat)
C C90 GE J Easy to mount with 1 screw, T = 125°C 4.8 V J (isolated mounting screw hole) © 2004 IXYS All rights reserved DS98942D(09/04)