Datasheet RTR020P02 (Rohm) - 3

RTR020P02 Tr ansistors z
Electrical characteristic curves
10 ) 1000 ) 1000 V Ω Ω DS= −10V Ta=25°C VGS= −10V m Pulsed m ( Pulsed ( Pulsed V Ta=125°C GS= −2.5V (A) 1 DS (on) V Ta=75°C GS= −4.0V DS (on)R −ID R V Ta=25°C GS= −4.5V Ta= −25°C 0.1 100 100 Ta=125°C Ta=75°C Ta=25°C Ta= −25°C 0.01 DRAIN CURRENT : 0.001 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : 10 0.5 1.0 1.5 2.0 2.5 0.01 0.1 1 10 0.1 1 10 GATE-SOURCE VOLTAGE : −VGS (V) DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) Fig.1 Typical Transfer Characteristics Fig.2 Static Drain-Source On-State Fig.3 Static Drain-Source On-State Resistance vs. Drain Current Resistance vs. Drain Current ) 1000 ) Ω 1000 10 V Ω V m GS= −4.5V GS= −2.5V m (A) VGS=0V ( Pulsed ( Pulsed Pulsed Ta=125°C −IDR Ta=75°C DS (on) DS (on) R Ta=25°C R Ta= −25°C 1 Ta=125°C Ta=75°C 100 100 Ta=25°C Ta=125°C Ta= −25°C Ta=75°C Ta=25°C 0.1 Ta= −25°C STATIC DRAIN-SOURCE ON-STATE RESISTANCE : 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : 10 REVERSE DRAIN CURRENT : 0.01 0.1 1 10 0.1 1 10 0 0.5 1.0 1.5 2.0 DRAIN CURRENT : −ID (A) DRAIN CURRENT : −ID (A) SOURCE-DRAIN VOLTAGE : −VSD (V) Fig.4 Static Drain-Source On-State Fig.5 Static Drain-Source On-State Fig.6 Reverse Drain Current Resistance vs. Drain Current Resistance vs. Drain Current vs.Source-Drain Voltage 10000 10000 8 Ta=25°C Ta=25°C Ta=25°C f=1MHz VDD= −15V (V) 7 VDD= −15V VGS=0V VGS= −4.5V GS ID= −2.0A RG=10Ω −V RG=10Ω (ns) 1000 6 (pF) Pulsed Pulsed 1000 5 tf Ciss 100 4 td (off) 3 100 td (on) Coss 10 2 CAPACITANCE : C Crss SWITCHING TIME : t tr 1 GATE-SOURCE VOLTAGE : 10 1 0 0.01 0.1 1 10 100 0.01 0.1 1 10 0 1 2 3 4 5 6 DRAIN-SOURCE VOLTAGE : −VDS (V) DRAIN CURRENT : −ID (A) TOTAL GATE CHARGE : Qg (nC) Fig.7 Typical Capacitance Fig.8 Switching Characteristics Fig.9 Dynamic Input Characteristics vs. Drain-Source Voltage Rev.A 3/4 Document Outline 2.5V Drive Pch MOS FET RTR020P02