CLP24H4S30P RF power GaN-SiC HEMT Rev. 1 — 23 July 2024Product data sheet1. Productprofile1.1 General description 30 W GaN-SiC HEMT power transistor optimized with best Continuous Wave (CW) power and efficiency for applications in cooking, industrial, scientific and medical at frequencies from 2400 MHz to 2500 MHz. The CLP24H4S30P is designed for driving high-power CW transistors and is assembled in a high performance DFN package. Table 1.Application performance Typical RF performance in a class-AB application circuit, unless otherwise specified. Test signalfIDqVDSPL(AV)Gp D(MHz)(mA)(V)(W)(dB)(%) CW 2400 to 2500 20 50 25 17 75 1.2 Features and benefits High efficiency Ultra-small external matching circuit Designed for broadband operation (2400 MHz to 2500 MHz) Internally input matched For RoHS compliance see the product details on the Ampleon website 1.3 Applications RF power amplifier for CW applications in the 2400 MHz to 2500 MHz frequency range such as commercial and consumer cooking; industrial, scientific and medical applications Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 2. Pinning information 2.1 Pinning 2.2 Pin description 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Application information 7.1 Test circuit 7.2 Graphical data 7.3 Impedance information 8. Package outline 9. Handling information 10. Abbreviations 11. Revision history 12. Legal information 12.1 Data sheet status 12.2 Definitions 12.3 Disclaimers 12.4 Trademarks 13. Contact information 14. Contents