Datasheet DMHC4035LSDQ (Diodes) - 2
| Manufacturer | Diodes |
| Description | 40V Complementary Enhancement Mode MOSFET H-Bridge |
| Pages / Page | 9 / 2 — DMHC4035LSDQ. Thermal Characteristics. Characteristic. Symbol. Value. … |
| File Format / Size | PDF / 639 Kb |
| Document Language | English |
DMHC4035LSDQ. Thermal Characteristics. Characteristic. Symbol. Value. Unit. C N. U OI. D T. O A. R MT. Maximum Ratings N-CHANNEL. P RCU. W OD. E FO
Model Line for this Datasheet
Text Version of Document
DMHC4035LSDQ Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) PD 1.5 W Steady State 85 Thermal Resistance, Junction to Ambient (Note 6) RθJA t<10s 53 °C/W Thermal Resistance, Junction to Case RθJC 15
T
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
C N U OI D T O A R MT Maximum Ratings N-CHANNEL
(@TA = +25°C, unless otherwise specified.)
P RCU Characteristic Symbol Value Unit W OD
Drain-Source Voltage VDSS 40 V
E FO
Gate-Source Voltage VGSS ±20 V
N NI R
Steady TA = +25°C 4.5
EP
I A State D TA = +70°C 3.5
C
Continuous Drain Current (Note 6) VGS = 10V T 5.8
NW
t<10s A = +25° C I A T D 4.5
AE
A = +70° C
VN
Steady TA = +25°C 4 ID A
D
State TA = +70°C 3.1 Continuous Drain Current (Note 6) V
A
GS = 4.5V T 5.1 t<10s A = +25° C I A T D A = +70° C 4 Maximum Continuous Body Diode Forward Current (Note 6) IS 1.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 25 A
Maximum Ratings P-CHANNEL
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Steady TA = +25°C -3.7 I A State T D A = +70° C -2.9 Continuous Drain Current (Note 6) VGS = -10V T -4.8 t<10s A = +25° C ID A TA = +70°C -3.8 Steady TA = +25°C -2.9 I A State T D A = +70° C -2.3 Continuous Drain Current (Note 6) VGS = -4.5V T -3.9 t<10s A = +25° C ID A TA = +70°C -3.0 Maximum Continuous Body Diode Forward Current (Note 6) IS -1.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -15 A Note: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMHC4035LSDQ 2 of 9 March 2018 Document number: DS37219 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) PD 1.5 W Steady State 85 Thermal Resistance, Junction to Ambient (Note 6) RθJA t<10s 53 °C/W Thermal Resistance, Junction to Case RθJC 15
T
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
C N U OI D T O A R MT Maximum Ratings N-CHANNEL
(@TA = +25°C, unless otherwise specified.)
P RCU Characteristic Symbol Value Unit W OD
Drain-Source Voltage VDSS 40 V
E FO
Gate-Source Voltage VGSS ±20 V
N NI R
Steady TA = +25°C 4.5
EP
I A State D TA = +70°C 3.5
C
Continuous Drain Current (Note 6) VGS = 10V T 5.8
NW
t<10s A = +25° C I A T D 4.5
AE
A = +70° C
VN
Steady TA = +25°C 4 ID A
D
State TA = +70°C 3.1 Continuous Drain Current (Note 6) V
A
GS = 4.5V T 5.1 t<10s A = +25° C I A T D A = +70° C 4 Maximum Continuous Body Diode Forward Current (Note 6) IS 1.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 25 A
Maximum Ratings P-CHANNEL
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Steady TA = +25°C -3.7 I A State T D A = +70° C -2.9 Continuous Drain Current (Note 6) VGS = -10V T -4.8 t<10s A = +25° C ID A TA = +70°C -3.8 Steady TA = +25°C -2.9 I A State T D A = +70° C -2.3 Continuous Drain Current (Note 6) VGS = -4.5V T -3.9 t<10s A = +25° C ID A TA = +70°C -3.0 Maximum Continuous Body Diode Forward Current (Note 6) IS -1.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -15 A Note: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMHC4035LSDQ 2 of 9 March 2018 Document number: DS37219 Rev. 2 - 2
www.diodes.com
© Diodes Incorporated