Datasheet DMTH4008LFDFWQ (Diodes) - 3
Manufacturer | Diodes |
Description | 40V +175?C N-Channel Enhancement Mode MOSFET |
Pages / Page | 8 / 3 — DMTH4008LFDFWQ. Thermal Characteristics. Characteristic. Symbol. Value. … |
File Format / Size | PDF / 484 Kb |
Document Language | English |
DMTH4008LFDFWQ. Thermal Characteristics. Characteristic. Symbol. Value. Unit. Electrical Characteristics. Min. Typ. Max. Test Condition

Model Line for this Datasheet
Text Version of Document
DMTH4008LFDFWQ Thermal Characteristics Characteristic Symbol Value Unit
Total Power Dissipation (Note 7) TA = +25°C PD 0.99 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RθJA 153 °C/W Total Power Dissipation (Note 5) TA = +25°C PD 2.35 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 64.5 °C/W Thermal Resistance, Junction to Case (Note 5) TC = +25°C RθJC 14.8 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS
(Note 8) Drain-Source Breakdown Voltage BVDSS 40 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 µA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS
(Note 8) Gate Threshold Voltage VGS(TH) 1 1.7 3 V VDS = VGS, ID = 250μA VGS = 10V, ID = 10A Static Drain-Source On-Resistance RDS(ON) — 9.1 11.5 mΩ 12.9 18 VGS = 4.5V, ID = 8.5A Diode Forward Voltage VSD — 0.8 1.0 V VGS = 0V, IS = 10A
DYNAMIC CHARACTERISTICS
(Note 9) Input Capacitance Ciss — 1030 — V Output Capacitance Coss — 324 — pF DS = 20V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Crss — 27 — Gate Resistance Rg — 1.82 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) Qg — 6.8 — Total Gate Charge (VGS = 10V) Qg — 14.2 — nC VDD = 20V, ID = 10A Gate-Source Charge Qgs — 2.0 — Gate-Drain Charge Qgd — 2.7 — Turn-On Delay Time tD(ON) — 3.1 — Turn-On Rise Time tR — 3.1 — VDD = 20V, VGS = 10V, ns Turn-Off Delay Time tD(OFF) — 14.2 — Rg = 6Ω, ID = 10A Turn-Off Fall Time tF — 5.8 — Reverse-Recovery Time tRR — 19.6 — ns IF = 10A, di/dt = 100A/μs Reverse-Recovery Charge QRR — 8.2 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMTH4008LFDFWQ 3 of 8 May 2025 Document number: DS39771 Rev. 5 - 2
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