Datasheet Si4936DY (Vishay) - 3
| Manufacturer | Vishay |
| Description | Dual N-Channel 30-V (D-S) MOSFET |
| Pages / Page | 4 / 3 — Si4936DY. Vishay Siliconix. 3-3 |
| File Format / Size | PDF / 55 Kb |
| Document Language | English |
Si4936DY. Vishay Siliconix. 3-3
Model Line for this Datasheet
Text Version of Document
Si4936DY Vishay Siliconix
'&#'& $&$%&% $!%$ $&$%&% 30 30 VGS = 10 thru 5 V TC = –55C 24 24 25C 125C 18 18 4 V 12 12 – Drain Current (A) – Drain Current (A) D D I I 6 6 2, 1 V 3 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) !)%%&! (% $! '$$!& #&! 0.10 1250 Ciss ) 0.08 1000 0.06 750 VGS = 4.5 V 0.04 V 500 GS = 10 V Coss – On-Resistance ( C – Capacitance (pF) 0.02 250 r DS(on) Crss 0 0 0 6 12 18 24 30 36 0 6 12 18 24 30 I V D – Drain Current (A) DS – Drain-to-Source Voltage (V) & $ !)%%&! (% '!&"! #$&'$ 10 2.00 VDS = 15 V 1.75 VGS = 10 V 8 (V) ID = 5.8 A I ) D = 5.8 A 1.50 oltage 6 1.25 4 (Normalized) – On-Resistance ( 1.00 – Gate-to-Source V 2 r DS(on) 0.75 GSV 0 0.5 0 4 8 12 16 20 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (C) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-49532—Rev. D, 02-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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'&#'& $&$%&% $!%$ $&$%&% 30 30 VGS = 10 thru 5 V TC = –55C 24 24 25C 125C 18 18 4 V 12 12 – Drain Current (A) – Drain Current (A) D D I I 6 6 2, 1 V 3 V 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 1 2 3 4 5 6 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) !)%%&! (% $! '$$!& #&! 0.10 1250 Ciss ) 0.08 1000 0.06 750 VGS = 4.5 V 0.04 V 500 GS = 10 V Coss – On-Resistance ( C – Capacitance (pF) 0.02 250 r DS(on) Crss 0 0 0 6 12 18 24 30 36 0 6 12 18 24 30 I V D – Drain Current (A) DS – Drain-to-Source Voltage (V) & $ !)%%&! (% '!&"! #$&'$ 10 2.00 VDS = 15 V 1.75 VGS = 10 V 8 (V) ID = 5.8 A I ) D = 5.8 A 1.50 oltage 6 1.25 4 (Normalized) – On-Resistance ( 1.00 – Gate-to-Source V 2 r DS(on) 0.75 GSV 0 0.5 0 4 8 12 16 20 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (C) Vishay Siliconix, 2201 Laurelwood Road, Santa Clara, CA 95054 Phone (408)988-8000 FaxBack (408)970-5600 www.siliconix.com S-49532—Rev. D, 02-Feb-98 Siliconix was formerly a division of TEMIC Semiconductors
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