Datasheet FDMA430NZ (ON Semiconductor) - 2

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FDMA430NZ ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise noted)
Symbol Parameter Test Condition Min Typ Max Unit OFF CHARACTERISTICS
BVDSS Drain−Source Breakdown Voltage ID = 250 mA, VGS = 0 V 30 − − V DBV Breakdown Voltage Temperature I DSS D = 250 mA, referenced to 25°C − 25.2 − mV/°C Coefficient DTJ IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V − − 1 mA IGSS Gate−Body Leakage VGS = ±12 V, VDS = 0 V − − ±10 mA
ON CHARACTERISTICS
(Note 2) VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 mA 0.6 0.81 1.5 V DV Gate Threshold Voltage GS(th) ID = 250 mA, referenced to 25°C − −3.2 − mV/°C Temperature Coefficient DTJ RDS(on) Static Drain−Source On Resistance VGS = 4.5 V, ID = 5.0 A − 23.6 40 mW VGS = 4.0 V, ID = 5.0 A − 23.9 41 VGS = 3.1 V, ID = 4.5 A − 25.4 43 VGS = 2.5 V, ID = 4.5 A − 27.6 50 VGS = 4.5 V, ID = 5.0 A, TJ = 150°C − 37.0 61 gFS Forward Transconductance VDS = 5 V, ID = 5.0 A − 25.6 − S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz − 600 800 pF Coss Output Capacitance − 110 150 pF Crss Reverse Transfer Capacitance − 75 115 pF RG Gate Resistance f = 1.0 MHz − 3.5 − W
SWITCHING CHARACTERISTICS
(Note 2) td(on) Turn−On Delay Time VDD = 10 V, ID = 1 A, − 8.3 17 ns VGS = 4.5 V, RGEN = 6 W tr Turn−On Rise Time − 7.1 15 ns td(off) Turn−Off Delay Time − 18.1 37 ns tf Turn−Off Fall Time − 6.0 12 ns Qg Total Gate Charge VDS = 10 V, ID = 5.0 A, VGS = 4.5 V − 7.3 11 nC Qgs Gate−Source Charge − 0.8 2 nC Qgd Gate−Drain Charge − 1.9 3 nC
DRAIN−SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain−Source Diode Forward Current − − 2.0 A VSD Drain−Source Diode Forward Voltage VGS = 0 V, IS = 2.0 A − 0.69 1.2 V trr Diode Reverse Recovery Time IF = 5.0 A, di/dt = 100 A/ms − − 17 ns Qrr Diode Reverse Recovery Charge − − 5 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. RqJA is the sum of the junction−to−case and case−to−ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. a. 52°C/W when mounted b. 145°C/W when mounted on a 1 in2 pad of 2 oz copper on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
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