Datasheet SI7489DP (Vishay) - 6

ManufacturerVishay
DescriptionP-Channel 100-V (D-S) MOSFET
Pages / Page13 / 6 — Si7489DP. TYPICAL CHARACTERISTICS. Normalized Thermal Transient …
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Si7489DP. TYPICAL CHARACTERISTICS. Normalized Thermal Transient Impedance, Junction-to-Ambient

Si7489DP TYPICAL CHARACTERISTICS Normalized Thermal Transient Impedance, Junction-to-Ambient

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Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 ransient T 0.2 e Notes: fectiv 0.1 mal Impedance P 0.1 DM ed Ef 0.05 Ther maliz t 0.02 1 t2 Nor t1 1. Duty Cycle, D = t2 2. Per Unit Base = R thJA = 65 °C/W 3. T (t) JM - TA = PDMZthJA Single Pulse 4. Surface Mounted 0.01 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5 ransient T e 0.2 0.1 fectiv mal Impedance 0.1 0.05 ed Ef Ther 0.02 maliz Nor Single Pulse 0.01 10-3 10-2 10-1 10-4 1 Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?73436. www.vishay.com Document Number: 73436 6 S09-0271-Rev. C, 16-Feb-09