Datasheet BIDW50N65T (Bourns) - 9

ManufacturerBourns
DescriptionInsulated Gate Bipolar Transistor (IGBT)
Pages / Page10 / 9 — BIDW50N65T Insulated Gate Bipolar Transistor (IGBT). Product Dimensions. …
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BIDW50N65T Insulated Gate Bipolar Transistor (IGBT). Product Dimensions. Symbol. Min. Nom. Max. Packaging Specifications

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT) Product Dimensions Symbol Min Nom Max Packaging Specifications

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BIDW50N65T Insulated Gate Bipolar Transistor (IGBT) Product Dimensions
E A
Symbol Min. Nom. Max.
P DIA. Q A2 A 4.80 5.00 5.20 (.189) (.197) (.205) A1 2.21 2.41 2.59 (.087) (.095) (.102) E2 D A2 1.85 2.00 2.15 (.073) (.079) (.085) b 1.11 (.044) — 1.36 (.054) L1 b2 1.91 (.075) — 2.25 (.089) L b4 2.91 (.115) — 3.25 (.128) c 0.51 b2 b c A1 (.020) — 0.75 (.030) b4 e D 20.80 21.00 21.30 (.819) (.827) (.839) MM DIMENSIONS: 15.80 16.10 (INCHES) E 15.50 (.610) (.622) (.634) E2 4.40 5.00 5.20 (.173) (.197) (.205)
Packaging Specifications
BIDW50N65T ... 30 pieces per tube e 5.44 BSC (.214) L 19.72 19.92 20.22 (.776) (.784) (.796) L1 — — 4.30 (.169) P 3.40 (.134) — 3.80 (.150) Q 5.60 5.80 6.00 (.220) (.228) (.236)
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REV. 04/23 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.