Datasheet MDF11N65B (Magnachip) - 3

M DF 1 1
20 0.80
N65 V =4.5V gs =5.0V
0.75
B =5.5V
16
=6.0V N =6.5V - =7.0V
0.70
c
[A]
=8.0V ha
t 12
]
n
=10.0V V =10.0V Ω =15.0V GS [ nnel
rre u
)
0.65
N
C
O(
8
S
in
V =20V D GS R MOS
ra 0.60 ,D I D 4 0.55
Notes FET 1. 250㎲ Pulse Test 2. T =25℃ C
0 0.50
6
0 5 10 15 2 4 6 8 10 12 14 16 18 20
5 V ,Drain-Source Voltage [V] I ,Drain Current [A] 0 DS D V Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with Drain Current and Gate Voltage
3.0 1.2
※
※ Notes :
Notes :
1. V = 0 V
1. V = 10 V
GS 2.5
GS
ge 2. I = 250㎂
2. I = 6A
D
D
ta nce ol 1.1 ) V ta ed s 2.0 ed n iz iz w esi al al do k n-R orm O 1.5 orm 1.0 rea e B , (N , (N ) e S N urc S D (O S urc 1.0 D BV R n-So ai n-So 0.9 ai Dr 0.5 Dr 0.0 0.8 -50 0 50 100 150 -50 0 50 100 150 T , Junction Temperature [oC] T , Junction Temperature [oC] J J
Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs. Temperature Temperature
* Notes ; ※ Notes : 1. Vds=30V 1. V = 0 V GS 2.250s Pulse test ent [A] 10 r 10 ur
)
150℃ 25℃ n C
(A
I DR air
I D
150℃ -55℃ e D 25℃ s ever R 1 1 4 5 6 7 8 0.4 0.6 0.8 1.0 1.2
V [V]
V , Source-Drain Voltage [V]
GS
SD
Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature
Jan. 2021. Version 1.2 3 Magnachip Semiconductor Ltd.