Datasheet IRFP460 (Vishay) - 2
| Manufacturer | Vishay |
| Description | Power MOSFET in TO-247 package |
| Pages / Page | 11 / 2 — IRFP460. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. … |
| File Format / Size | PDF / 478 Kb |
| Document Language | English |
IRFP460. THERMAL RESISTANCE RATINGS PARAMETER SYMBOL. TYP. MAX. UNIT. SPECIFICATIONS. PARAMETER SYMBOL. TEST. CONDITIONS. MIN. Static
Model Line for this Datasheet
Text Version of Document
IRFP460
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.45
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 12 Ab - - 0.27 Ω Forward transconductance gfs VDS = 50 V, ID = 12 Ab 13 - - S
Dynamic
Input capacitance Ciss V - 4200 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 870 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 350 - Total gate charge Qg - - 210 I Gate-source charge Qgs V D = 20 A, VDS = 400 V GS = 10 V - - 29 nC see fig. 6 and 13b Gate-drain charge Qgd - - 110 Turn-on delay time td(on) - 18 - Rise time tr V - 59 - DD = 250 V, ID = 20 A , ns R Turn-off delay time t G = 4.3 Ω, RD = 13 Ω, see fig. 10b d(off) - 110 - Fall time tf - 58 - Internal drain inductance LD Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance LS G - 13 - die contact S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol - - 20 D showing the integral reverse A Pulsed diode forward current a I G SM - - 80 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb - - 1.8 V Body diode reverse recovery time trr - 570 860 ns TJ = 25 °C, IF = 20A, dI/dt = 100 A/μsb Body diode reverse recovery charge Qrr - 5.7 8.6 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S22-0058-Rev. B, 31-Jan-2022
2
Document Number: 91237 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient RthJA - 40 Case-to-sink, flat, greased surface RthCS 0.24 - °C/W Maximum junction-to-case (drain) RthJC - 0.45
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static
Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 500 - - V VDS temperature coefficient ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.63 - V/°C Gate-source threshold voltage VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-source leakage IGSS VGS = ± 20 V - - ± 100 nA VDS = 500 V, VGS = 0 V - - 25 Zero gate voltage drain current IDSS μA VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Drain-source on-state resistance RDS(on) VGS = 10 V ID = 12 Ab - - 0.27 Ω Forward transconductance gfs VDS = 50 V, ID = 12 Ab 13 - - S
Dynamic
Input capacitance Ciss V - 4200 - GS = 0 V, Output capacitance Coss VDS = 25 V, - 870 - pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance Crss - 350 - Total gate charge Qg - - 210 I Gate-source charge Qgs V D = 20 A, VDS = 400 V GS = 10 V - - 29 nC see fig. 6 and 13b Gate-drain charge Qgd - - 110 Turn-on delay time td(on) - 18 - Rise time tr V - 59 - DD = 250 V, ID = 20 A , ns R Turn-off delay time t G = 4.3 Ω, RD = 13 Ω, see fig. 10b d(off) - 110 - Fall time tf - 58 - Internal drain inductance LD Between lead, D - 5.0 - 6 mm (0.25") from package and center of nH Internal source inductance LS G - 13 - die contact S
Drain-Source Body Diode Characteristics
Continuous source-drain diode current IS MOSFET symbol - - 20 D showing the integral reverse A Pulsed diode forward current a I G SM - - 80 p - n junction diode S Body diode voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 Vb - - 1.8 V Body diode reverse recovery time trr - 570 860 ns TJ = 25 °C, IF = 20A, dI/dt = 100 A/μsb Body diode reverse recovery charge Qrr - 5.7 8.6 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width ≤ 300 μs; duty cycle ≤ 2 % S22-0058-Rev. B, 31-Jan-2022
2
Document Number: 91237 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000