IRFP460 www.vishay.com Vishay Siliconix L V V DS DS Vary tp to obtain t required I p AS VDD R D.U.T G + V - DD V I A DS AS 10 V t 0.01 p Ω IAS Fig. 13 - Unclamped Inductive Test CircuitFig. 14 - Unclamped Inductive Waveforms 2400 ID Top 8.9 A 2000 13 A Bottom 20 A 1600 1200 800 , Single Pulse Energy (mJ) 400 ASE V = 50 V DD 0 25 50 75 100 125 150 91237_12c Starting TJ, Junction Temperature (°C) Fig. 15 - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q 50 kΩ G 10 V 12 V 0.2 µF 0.3 µF Q Q GS GD + V D.U.T. DS - VG VGS 3 mA Charge I I G D Current sampling resistors Fig. 16 - Basic Gate Charge WaveformFig. 17 - Gate Charge Test Circuit S22-0058-Rev. B, 31-Jan-2022 6 Document Number: 91237 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000