Datasheet TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G,TIP32AG, TIP32BG, TIP32CG (PNP) (ON Semiconductor) - 5
| Manufacturer | ON Semiconductor |
| Description | NPN Bipolar Power Transistor in TO-220-3 package |
| Pages / Page | 7 / 5 — TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,. … |
| File Format / Size | PDF / 82 Kb |
| Document Language | English |
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG,. TIP32CG (PNP). Figure 8. DC Current Gain
Model Line for this Datasheet
Text Version of Document
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP)
500 2.0 TS) 300 T T J = 150°C VCE = 2.0 V J = 25°C 1.6 TAGE (VOL GAIN 25°C 100 I 1.0 A 3.0 A 70 1.2 C = 0.3 A -55°C 50 30 0.8 , DC CURRENT OR-EMITTER VOL FEh 0.4 10 , COLLECT 7.0 CE 5.0 V 0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 I I C, COLLECTOR CURRENT (AMP) B, BASE CURRENT (mA)
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
1.4 +2.5 T C) J = 25°C ° +2.0 *APPLIES FOR I 1.2 C/IB ≤ hFE/2 +1.5 TJ = -65°C TO +150°C 1.0 TS) +1.0 +0.5 *q 0.8 VC FOR VCE(sat) VBE(sat) @ IC/IB = 10 0 TAGE (VOL 0.6 V -0.5 BE @ VCE = 2.0 V , VOL TURE COEFFICIENTS (mV/ V 0.4 -1.0 -1.5 qVB FOR VBE 0.2 VCE(sat) @ IC/IB = 10 , TEMPERA -2.0 Vθ 0 -2.5 0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I I C, COLLECTOR CURRENT (AMPS) C, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages Figure 11. Temperature Coefficients
103 107 VCE = 30 V V 102 ANCE (OHMS) CE = 30 V I μ C = 10 x ICES 106 (A) TJ = 150°C 101 I 105 C ≈ ICES 100 100°C OR CURRENT 104 IC = 2 x ICES 10-1 REVERSE FORWARD BASE-EMITTER RESIST , COLLECT 103 I C 10-2 25°C (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) ICES , EXTERNAL 10-3 102 BE -0.4 -0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 R 20 40 60 80 100 120 140 160 V T BE, BASE−EMITTER VOLTAGE (VOLTS) J, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance www.onsemi.com 5
500 2.0 TS) 300 T T J = 150°C VCE = 2.0 V J = 25°C 1.6 TAGE (VOL GAIN 25°C 100 I 1.0 A 3.0 A 70 1.2 C = 0.3 A -55°C 50 30 0.8 , DC CURRENT OR-EMITTER VOL FEh 0.4 10 , COLLECT 7.0 CE 5.0 V 0 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1.0 3.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 I I C, COLLECTOR CURRENT (AMP) B, BASE CURRENT (mA)
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
1.4 +2.5 T C) J = 25°C ° +2.0 *APPLIES FOR I 1.2 C/IB ≤ hFE/2 +1.5 TJ = -65°C TO +150°C 1.0 TS) +1.0 +0.5 *q 0.8 VC FOR VCE(sat) VBE(sat) @ IC/IB = 10 0 TAGE (VOL 0.6 V -0.5 BE @ VCE = 2.0 V , VOL TURE COEFFICIENTS (mV/ V 0.4 -1.0 -1.5 qVB FOR VBE 0.2 VCE(sat) @ IC/IB = 10 , TEMPERA -2.0 Vθ 0 -2.5 0.003 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 0.003 0.005 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 I I C, COLLECTOR CURRENT (AMPS) C, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages Figure 11. Temperature Coefficients
103 107 VCE = 30 V V 102 ANCE (OHMS) CE = 30 V I μ C = 10 x ICES 106 (A) TJ = 150°C 101 I 105 C ≈ ICES 100 100°C OR CURRENT 104 IC = 2 x ICES 10-1 REVERSE FORWARD BASE-EMITTER RESIST , COLLECT 103 I C 10-2 25°C (TYPICAL ICES VALUES OBTAINED FROM FIGURE 12) ICES , EXTERNAL 10-3 102 BE -0.4 -0.3 -0.2 -0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 R 20 40 60 80 100 120 140 160 V T BE, BASE−EMITTER VOLTAGE (VOLTS) J, JUNCTION TEMPERATURE (°C)
Figure 12. Collector Cut−Off Region Figure 13. Effects of Base−Emitter Resistance www.onsemi.com 5