Datasheet DXTN80100CFGQ (Diodes) - 4
| Manufacturer | Diodes |
| Description | NPN, 100V, 5.5A, PowerDI3333-8 |
| Pages / Page | 8 / 4 — DXTN80100CFGQ. Electrical Characteristics. Characteristic. Symbol. Min. … |
| File Format / Size | PDF / 637 Kb |
| Document Language | English |
DXTN80100CFGQ. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. Fig 6. Timing Waveform
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DXTN80100CFGQ Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 150 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 100 — — V IC = 10mA Emitter-Collector Breakdown Voltage BVECO 5 — — V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 8 — — V IE = 100µA — — 100 nA V Collector Cutoff Current CB = 150V ICBO — — 10 µA VCB = 150V, TA = +125°C Collector Cutoff Current ICES — — 300 nA VCE = 80V Emitter Cutoff Current IEBO — — 50 nA VEB = 7V VCE(sat) — 70 — mV IC = 100mA, IB = 1mA — 80 140 mV IC = 1A, IB = 20mA — 33 45 mV I Collector-Emitter Saturation Voltage (Note 10) C = 1A, IB = 100mA VCE(sat) — 110 160 mV IC = 3.5A, IB = 175mA — 130 180 mV IC = 5.5A, IB = 550mA — 870 950 mV IC = 3.5A, IB = 175mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — 970 1,050 mV IC = 5.5A, IB = 550mA — 790 850 mV IC = 3.5A, VCE = 2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — 850 950 mV IC = 5.5A, VCE = 2V 200 320 — — IC = 10mA, VCE = 2V 250 310 420 — IC = 100mA, VCE = 2V 235 300 — — IC = 1A, VCE = 2V DC Current Gain (Note 10) hFE 110 190 — — IC = 2A, VCE = 2V 40 80 — — IC = 3.5A, VCE = 2V 20 35 — — IC = 5.5A, VCE = 2V Input Capacitance Cibo — 640 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 24 — pF VCB = 10V, f = 1MHz Current Gain-Bandwidth Product fT 100 125 — MHz VCE = 10V, IC = 100mA f = 50MHz td Turn-On Time — 14 — ns tr — 210 — ns VCC = 10V, IC = 3.5A ts I — 440 — ns B1 = -IB2 = 350mA Turn-Off Time tf — 110 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTN80100CFGQ 4 of 8 August 2025 Document number: DS46959 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 150 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 100 — — V IC = 10mA Emitter-Collector Breakdown Voltage BVECO 5 — — V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 8 — — V IE = 100µA — — 100 nA V Collector Cutoff Current CB = 150V ICBO — — 10 µA VCB = 150V, TA = +125°C Collector Cutoff Current ICES — — 300 nA VCE = 80V Emitter Cutoff Current IEBO — — 50 nA VEB = 7V VCE(sat) — 70 — mV IC = 100mA, IB = 1mA — 80 140 mV IC = 1A, IB = 20mA — 33 45 mV I Collector-Emitter Saturation Voltage (Note 10) C = 1A, IB = 100mA VCE(sat) — 110 160 mV IC = 3.5A, IB = 175mA — 130 180 mV IC = 5.5A, IB = 550mA — 870 950 mV IC = 3.5A, IB = 175mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — 970 1,050 mV IC = 5.5A, IB = 550mA — 790 850 mV IC = 3.5A, VCE = 2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — 850 950 mV IC = 5.5A, VCE = 2V 200 320 — — IC = 10mA, VCE = 2V 250 310 420 — IC = 100mA, VCE = 2V 235 300 — — IC = 1A, VCE = 2V DC Current Gain (Note 10) hFE 110 190 — — IC = 2A, VCE = 2V 40 80 — — IC = 3.5A, VCE = 2V 20 35 — — IC = 5.5A, VCE = 2V Input Capacitance Cibo — 640 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 24 — pF VCB = 10V, f = 1MHz Current Gain-Bandwidth Product fT 100 125 — MHz VCE = 10V, IC = 100mA f = 50MHz td Turn-On Time — 14 — ns tr — 210 — ns VCC = 10V, IC = 3.5A ts I — 440 — ns B1 = -IB2 = 350mA Turn-Off Time tf — 110 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTN80100CFGQ 4 of 8 August 2025 Document number: DS46959 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.