Datasheet DXTN80030DFGQ (Diodes) - 4
| Manufacturer | Diodes |
| Description | NPN, 30V, 10A, PowerDI3333-8 |
| Pages / Page | 8 / 4 — DXTN80030DFGQ. Electrical Characteristics. Characteristic. Symbol. Min. … |
| File Format / Size | PDF / 666 Kb |
| Document Language | English |
DXTN80030DFGQ. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. Fig 6. Timing Waveform
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DXTN80030DFGQ Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 80 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 30 — — V IC = 10mA Emitter-Collector Breakdown Voltage BVECO 5 — — V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 8 — — V IE = 100µA — — 100 nA V Collector Cutoff Current CB = 80V ICBO — — 10 µA VCB = 80V, TA = +125°C Collector Cutoff Current ICES — — 300 nA VCE = 24V Emitter Cutoff Current IEBO — — 50 nA VEB = 7V — 28 — mV IC = 100mA, IB = 1mA — 17 30 mV IC = 1A, IB = 100mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — 40 65 mV IC = 2A, IB = 40mA — 75 125 mV IC = 5A, IB = 100mA — 120 160 mV IC = 10A, IB = 500mA — 850 1,000 mV IC = 5A, IB = 100mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — 970 1,150 mV IC = 10A, IB = 500mA — 750 900 mV IC = 5A, VCE = 2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — 760 900 mV IC = 10A, VCE = 2V — 380 — — IC = 10mA, VCE = 2V 300 380 550 — IC = 100mA, VCE = 2V 270 365 — — IC = 1A, VCE = 2V DC Current Gain (Note 10) hFE 250 350 — — IC = 2A, VCE = 2V 200 310 — — IC = 5A, VCE = 2V 100 250 — — IC = 10A, VCE = 2V Input Capacitance Cibo — 620 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 50 — pF VCB = 10V, f = 1MHz Current Gain-Bandwidth Product fT 100 130 — MHz VCE = 10V, IC = 100mA f = 50MHz td Turn-On Time — 13.5 — ns tr — 55 — ns VCC = 10V, IC = 5A ts I — 230 — ns B1 = -IB2 = 500mA Turn-Off Time tf — 4 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTN80030DFGQ 4 of 8 August 2025 Document number: DS46957 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 80 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 30 — — V IC = 10mA Emitter-Collector Breakdown Voltage BVECO 5 — — V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 8 — — V IE = 100µA — — 100 nA V Collector Cutoff Current CB = 80V ICBO — — 10 µA VCB = 80V, TA = +125°C Collector Cutoff Current ICES — — 300 nA VCE = 24V Emitter Cutoff Current IEBO — — 50 nA VEB = 7V — 28 — mV IC = 100mA, IB = 1mA — 17 30 mV IC = 1A, IB = 100mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — 40 65 mV IC = 2A, IB = 40mA — 75 125 mV IC = 5A, IB = 100mA — 120 160 mV IC = 10A, IB = 500mA — 850 1,000 mV IC = 5A, IB = 100mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — 970 1,150 mV IC = 10A, IB = 500mA — 750 900 mV IC = 5A, VCE = 2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — 760 900 mV IC = 10A, VCE = 2V — 380 — — IC = 10mA, VCE = 2V 300 380 550 — IC = 100mA, VCE = 2V 270 365 — — IC = 1A, VCE = 2V DC Current Gain (Note 10) hFE 250 350 — — IC = 2A, VCE = 2V 200 310 — — IC = 5A, VCE = 2V 100 250 — — IC = 10A, VCE = 2V Input Capacitance Cibo — 620 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 50 — pF VCB = 10V, f = 1MHz Current Gain-Bandwidth Product fT 100 130 — MHz VCE = 10V, IC = 100mA f = 50MHz td Turn-On Time — 13.5 — ns tr — 55 — ns VCC = 10V, IC = 5A ts I — 230 — ns B1 = -IB2 = 500mA Turn-Off Time tf — 4 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTN80030DFGQ 4 of 8 August 2025 Document number: DS46957 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.