Datasheet DXTP78060DFGQ (Diodes) - 4
| Manufacturer | Diodes |
| Description | PNP, 60V, 4.5A in PowerDI3333-8/SWP package |
| Pages / Page | 8 / 4 — DXTP78060DFGQ. Electrical Characteristics. Characteristic. Symbol. Min. … |
| File Format / Size | PDF / 648 Kb |
| Document Language | English |
DXTP78060DFGQ. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. Fig 6. Timing Waveform
Model Line for this Datasheet
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DXTP78060DFGQ Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -70 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -60 — — V IC = -10mA Emitter-Collector Breakdown Voltage BVECO -5 — — V IE = -100µA Emitter-Base Breakdown Voltage BVEBO -8 — — V IE = -100µA — — -100 nA V Collector Cutoff Current CB = -70V ICBO — — -10 µA VCB = -70V, TA = +125°C Collector Cutoff Current ICES — — -300 nA VCE = -48V Emitter Cutoff Current IEBO — — -50 nA VEB = -7V — -70 — mV IC = -100mA, IB = -1mA — -75 -110 mV IC = -1A, IB = -50mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — -52 -65 mV IC = -1A, IB = -100mA — -180 -250 mV IC = -2.5A, IB = -125mA — -220 -350 mV IC = -4.5A, IB = -450mA — -860 -950 mV IC = -2.5A, IB = -125mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — -960 -1,050 mV IC = -4.5A, IB = -450mA — -750 -850 mV IC = -2.5A, VCE = -2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — -810 -900 mV IC = -4.5A, VCE = -2V 250 355 — — IC = -10mA, VCE = -2V 300 350 550 — IC = -100mA, VCE = -2V DC Current Gain (Note 10) hFE 240 315 — — IC = -1A, VCE = -2V 130 310 — — IC = -2.5A, VCE = -2V 20 40 — — IC = -4.5A, VCE = -2V Input Capacitance Cibo — 300 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 25 — pF VCB = 10V, f = 1MHz Current Gain-Bandwidth Product fT 200 320 — MHz VCE = -10V, IC = -100mA f = 50MHz td — 12 — ns Turn-On Time tr — 60 — ns VCC = -10V, IC = -2.5A ts — 175 — ns IB1 = -IB2 = -250mA Turn-Off Time tf — 21 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTP78060DFGQ 4 of 8 September 2025 Document number: DS46961 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -70 — — V IC = -100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO -60 — — V IC = -10mA Emitter-Collector Breakdown Voltage BVECO -5 — — V IE = -100µA Emitter-Base Breakdown Voltage BVEBO -8 — — V IE = -100µA — — -100 nA V Collector Cutoff Current CB = -70V ICBO — — -10 µA VCB = -70V, TA = +125°C Collector Cutoff Current ICES — — -300 nA VCE = -48V Emitter Cutoff Current IEBO — — -50 nA VEB = -7V — -70 — mV IC = -100mA, IB = -1mA — -75 -110 mV IC = -1A, IB = -50mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — -52 -65 mV IC = -1A, IB = -100mA — -180 -250 mV IC = -2.5A, IB = -125mA — -220 -350 mV IC = -4.5A, IB = -450mA — -860 -950 mV IC = -2.5A, IB = -125mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — -960 -1,050 mV IC = -4.5A, IB = -450mA — -750 -850 mV IC = -2.5A, VCE = -2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — -810 -900 mV IC = -4.5A, VCE = -2V 250 355 — — IC = -10mA, VCE = -2V 300 350 550 — IC = -100mA, VCE = -2V DC Current Gain (Note 10) hFE 240 315 — — IC = -1A, VCE = -2V 130 310 — — IC = -2.5A, VCE = -2V 20 40 — — IC = -4.5A, VCE = -2V Input Capacitance Cibo — 300 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 25 — pF VCB = 10V, f = 1MHz Current Gain-Bandwidth Product fT 200 320 — MHz VCE = -10V, IC = -100mA f = 50MHz td — 12 — ns Turn-On Time tr — 60 — ns VCC = -10V, IC = -2.5A ts — 175 — ns IB1 = -IB2 = -250mA Turn-Off Time tf — 21 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTP78060DFGQ 4 of 8 September 2025 Document number: DS46961 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.